DMG6602SVT
Dual N-P channel power FET for V load managemeDMG6602SVT
Dual N-P channel power FET for V load manageme
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Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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DMG6602SVT DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Features• Low On-Resistance• 25mΩ @ VGS = 4.5V• 29mΩ @ VGS = 2.5V• 36mΩ @ VGS = 1.8V• Low Input Capacitance• Fast Switching Speed• Low Input/Output Leakage• Lead Free By Design/RoHS Compliant• ESD Protected Up To 2kVMechanical Data• Case: SOT-23• Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0• Moisture Sensitivity: Level 1 per J-STD-020D• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208• Terminals Connections: See Diagram Below• Marking Information: See Page 4• Ordering Information: See Page 4• Weight: 0.008 grams (approximate)
Key Features
- Low On-Resistance
- 25mΩ @ VGS = 4.5V
- 29mΩ @ VGS = 2.5V
- 36mΩ @ VGS = 1.8V
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Lead Free By Design/RoHS Compliant
- ESD Protected Up To 2kV
- Mechanical Data
- Case: SOT-23
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020D
- Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
- Terminals Connections: See Diagram Below
- Marking Information: See Page 4
- Ordering Information: See Page 4
- Weight: 0.008 grams (approximate)
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Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Z | Product Category ! | FETs - Arrays |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is DMG6602SVT?
The DMG6602SVT is a dual P-channel enhancement-mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Diodes Incorporated. It is suitable for various power management applications where low on-state resistance and high efficiency are required.
How Does DMG6602SVT Work?
The DMG6602SVT operates as a switch to control the flow of current in electronic circuits. As a P-channel MOSFET, it conducts current when a negative voltage is applied to its gate terminal, allowing power to flow through the device with low resistance.
How Many Pins does DMG6602SVT have and What are the Functions of the Pinout Configuration?
The DMG6602SVT is housed in a compact SOT-23 package with 3 pins. The pinout configuration includes:
- GATE: Controls the switching action of the MOSFET.
- SOURCE: Connected to the source of the MOSFET for current flow.
- DRAIN: Connected to the drain of the MOSFET for current output.
What are the Pros and Cons of DMG6602SVT?
Pros:
- Low On-State Resistance: Provides efficient power management with low voltage drops.
- Dual MOSFET Configuration: Offers the capability to control two separate channels concurrently.
- Compact Package: SOT-23 package is space-saving and suitable for small PCB designs.
- Enhancement-Mode Design: Simplifies circuit design by enabling easy gate control for switching.
Cons:
- Gate Voltage Requirement: Being a P-channel MOSFET, it requires a negative voltage for turn-on, which may need level shifting in some applications.
- Heat Dissipation: Depending on the application, heat dissipation considerations may be needed due to power dissipation.
Are There Any Equivalents/Alternatives to DMG6602SVT for Recommendation?
- The DMG2302SVT from Diodes Incorporated is a similar dual P-channel MOSFET with comparable specifications.
- Alternatives to the DMG6602SVT include the SI2302DS from Vishay and the BSS84LT1G from ON Semiconductor.
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