DMN1019USN-7
DMN1019USN-7 is a MOSFET designed with N-Type enhancement, possessing a capacitance of 2426 picofarads and a total charge of 27.3 nanocoulombsDMN1019USN-7
DMN1019USN-7 is a MOSFET designed with N-Type enhancement, possessing a capacitance of 2426 picofarads and a total charge of 27.3 nanocoulombs
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Manufacturer Part # : DMN1019USN-7
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Package/Case: SC59-3
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Part Status : ACTIVE
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Brand: Diodes Incorporated
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Product Categories : Single FETs, MOSFETs
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RoHS:
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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DMN1019USN-7 DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
5 | $0.132 | $0.66 |
50 | $0.115 | $5.75 |
150 | $0.108 | $16.20 |
500 | $0.096 | $48.00 |
3000 | $0.091 | $273.00 |
6000 | $0.089 | $534.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
Designed for automotive applications, the DMN1019USN-7 N-channel MOSFET boasts a continuous drain current of 9.3A and a drain source voltage of 12V. Its low on resistance of 0.007ohm and threshold voltage of 800mV make it an ideal choice for high-power electronics in vehicles. The SC-59 transistor case style with 3 pins allows for easy installation, and it meets MSL 1 - Unlimited standards. This product is also free from any SVHC as of January 15th, 2019, making it compliant with environmental regulations
Key Features
- MOSFET N-Channel, Metal Oxide Configuration
- ReelR Alternate Packaging
- Single Channel, DMN1019 Series
- Standard FET
- Features
- Surface Mount Mounting Style
- Maximum Vgs-Gate-Source-Voltage of 4.5V
- Maximum Drain-Source-Voltage of 20V
- Maximum Drain-Current of 402A
- Reel for In-Line-Package-Style Packaging
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SC59-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 12 V |
Id - Continuous Drain Current | 9.3 A | Rds On - Drain-Source Resistance | 10 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 350 mV |
Qg - Gate Charge | 27.3 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 1.2 W |
Channel Mode | Enhancement | Series | DMN1019 |
Brand | Diodes Incorporated | Configuration | Single |
Fall Time | 16.8 ns | Product Type ! | MOSFET |
Rise Time ! | 57.6 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 22.2 ns | Typical Turn-On Delay Time | 7.6 ns |
Unit Weight | 0.000282 oz |
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