DMN2020LSN-7
N-channel MOSFET transistor with a 20V voltage rating and 6.9A current capacityDMN2020LSN-7
N-channel MOSFET transistor with a 20V voltage rating and 6.9A current capacity
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Manufacturer Part # : DMN2020LSN-7
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Package/Case: SOT23-3
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Part Status : Active
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Brand: Diodes Incorporated
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Product Categories : Single FETs, MOSFETs
Quality Assurance
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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DMN2020LSN-7 DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Features• Low On-Resistance• Very Low Gate Threshold Voltage, 0.9V Max.• Fast Switching Speed• Low Input/Output Leakage• Ultra-Small Surface Mount Package• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)• Halogen and Antimony Free. “Green” Device (Note 3)• ESD Protected Gate• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
Key Features
- Low On-Resistance
- Very Low Gate Threshold Voltage, 0.9V Max.
- Fast Switching Speed
- Low Input/Output Leakage
- Ultra-Small Surface Mount Package
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- ESD Protected Gate
- For automotive applications requiring specific change
- control (i.e. parts qualified to AEC-Q100/101/200, PPAP
- capable, and manufactured in IATF 16949 certified facilities),
- please contact us or your local Diodes representative.
- https://www.diodes.com/quality/product-definitions/
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Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 6.9 A | Rds On - Drain-Source Resistance | 13 mOhms |
Vgs - Gate-Source Voltage | - 12 V, + 12 V | Vgs th - Gate-Source Threshold Voltage | 500 mV |
Qg - Gate Charge | 11.6 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 610 mW |
Channel Mode | Enhancement | Series | DMN2020 |
Brand | Diodes Incorporated | Configuration | Single |
Fall Time | 12.33 ns | Product | MOSFET Small Signals |
Product Type ! | MOSFET | Rise Time ! | 12.49 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 35.89 ns |
Typical Turn-On Delay Time | 11.67 ns | Unit Weight | 0.000282 oz |
Specification Comparison
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is DMN2020LSN-7?
The DMN2020LSN-7 is a dual N-channel enhancement mode MOSFET designed by Diodes Incorporated. It is ideal for low voltage, high efficiency applications such as load switches, power management, and battery protection circuits.
How Does DMN2020LSN-7 Work?
The DMN2020LSN-7 works by controlling the flow of current between the source and drain terminals using the gate voltage. It offers low on-resistance and high current-handling capabilities, making it suitable for power switching applications. The MOSFET features a compact and thermally efficient TSOP-6 package for space-constrained designs.
How Many Pins does DMN2020LSN-7 have and What are the Functions of the Pinout Configuration?
The DMN2020LSN-7 is housed in a 6-pin TSOP (Thin Small Outline Package) package. The pinout configuration includes:
- GATE: Gate terminal for controlling the MOSFET.
- Source (S): Source terminal for the MOSFET.
- Drain 1 (D1): First drain terminal for the dual MOSFET.
- Drain 2 (D2): Second drain terminal for the dual MOSFET.
- Source (S): Source terminal for the second MOSFET.
- GATE: Gate terminal for the second MOSFET.
What are the Pros and Cons of DMN2020LSN-7?
Pros:
- Low On-Resistance: Provides efficient current flow with minimal voltage drop.
- Dual MOSFET: Offers the convenience of a dual MOSFET in a single package for space-saving designs.
- High Current Capacity: Capable of handling high current levels for power switching applications.
- Compact Package: The TSOP-6 package is space-efficient and thermally effective.
Cons:
- Voltage Limitation: Designed for low voltage applications and may not be suitable for high voltage scenarios.
- External Heat Management: May require external thermal considerations for high power dissipation applications.
Are There Any Equivalents/Alternatives to DMN2020LSN-7 for Recommendation?
- The NDP6020P from ON Semiconductor is a comparable dual N-channel MOSFET.
- Alternatives to the DMN2020LSN-7 include the SI2301DS from Vishay and the BSS84 from Infineon Technologies.
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