DMN2020LSN-7

Effective Inventory4,171

N-channel MOSFET transistor with a 20V voltage rating and 6.9A current capacity

  • Manufacturer Part # : DMN2020LSN-7

  • Package/Case: SOT23-3

  • Part Status : Active

  • Brand: Diodes Incorporated

  • Product Categories : Single FETs, MOSFETs

Quality Assurance

Quality Assurance

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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DMN2020LSN-7 DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for DMN2020LSN-7 or email to us: Email: [email protected], we will contact you in 12 hours.

Details

Features• Low On-Resistance• Very Low Gate Threshold Voltage, 0.9V Max.• Fast Switching Speed• Low Input/Output Leakage• Ultra-Small Surface Mount Package• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)• Halogen and Antimony Free. “Green” Device (Note 3)• ESD Protected Gate• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Key Features

  • Low On-Resistance
  • Very Low Gate Threshold Voltage, 0.9V Max.
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • ESD Protected Gate
  • For automotive applications requiring specific change
  • control (i.e. parts qualified to AEC-Q100/101/200, PPAP
  • capable, and manufactured in IATF 16949 certified facilities),
  • please contact us or your local Diodes representative.
  • https://www.diodes.com/quality/product-definitions/
Diodes Incorporated Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 6.9 A Rds On - Drain-Source Resistance 13 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 500 mV
Qg - Gate Charge 11.6 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature ! + 150 C Pd - Power Dissipation 610 mW
Channel Mode Enhancement Series DMN2020
Brand Diodes Incorporated Configuration Single
Fall Time 12.33 ns Product MOSFET Small Signals
Product Type ! MOSFET Rise Time ! 12.49 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 35.89 ns
Typical Turn-On Delay Time 11.67 ns Unit Weight 0.000282 oz

Specification Comparison

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification DMN2020LSN-7 PDF Download

FAQs

What is DMN2020LSN-7?

The DMN2020LSN-7 is a dual N-channel enhancement mode MOSFET designed by Diodes Incorporated. It is ideal for low voltage, high efficiency applications such as load switches, power management, and battery protection circuits.

How Does DMN2020LSN-7 Work?

The DMN2020LSN-7 works by controlling the flow of current between the source and drain terminals using the gate voltage. It offers low on-resistance and high current-handling capabilities, making it suitable for power switching applications. The MOSFET features a compact and thermally efficient TSOP-6 package for space-constrained designs.

How Many Pins does DMN2020LSN-7 have and What are the Functions of the Pinout Configuration?

The DMN2020LSN-7 is housed in a 6-pin TSOP (Thin Small Outline Package) package. The pinout configuration includes:

  • GATE: Gate terminal for controlling the MOSFET.
  • Source (S): Source terminal for the MOSFET.
  • Drain 1 (D1): First drain terminal for the dual MOSFET.
  • Drain 2 (D2): Second drain terminal for the dual MOSFET.
  • Source (S): Source terminal for the second MOSFET.
  • GATE: Gate terminal for the second MOSFET.

What are the Pros and Cons of DMN2020LSN-7?

Pros:

  • Low On-Resistance: Provides efficient current flow with minimal voltage drop.
  • Dual MOSFET: Offers the convenience of a dual MOSFET in a single package for space-saving designs.
  • High Current Capacity: Capable of handling high current levels for power switching applications.
  • Compact Package: The TSOP-6 package is space-efficient and thermally effective.

Cons:

  • Voltage Limitation: Designed for low voltage applications and may not be suitable for high voltage scenarios.
  • External Heat Management: May require external thermal considerations for high power dissipation applications.

Are There Any Equivalents/Alternatives to DMN2020LSN-7 for Recommendation?

  • The NDP6020P from ON Semiconductor is a comparable dual N-channel MOSFET.
  • Alternatives to the DMN2020LSN-7 include the SI2301DS from Vishay and the BSS84 from Infineon Technologies.

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