DN3525N8-G
N-type Silicon Field-Effect Transistor with 250V Voltage Rating and 0.36A Current RatingDN3525N8-G
N-type Silicon Field-Effect Transistor with 250V Voltage Rating and 0.36A Current Rating
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Manufacturer Part # : DN3525N8-G
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Package/Case: SOT-89-3
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Part Status : ACTIVE
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Brand: Microchip
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Product Categories : Single FETs, MOSFETs
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RoHS:
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
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We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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DN3525N8-G DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
With its superior design and manufacturing process, the DN3525N8-G stands out as a versatile and dependable solution for electronic applications. Its advanced vertical DMOS structure offers the best of both worlds - the power handling capabilities of bipolar transistors and the high input impedance of MOS devices. This unique combination makes it an excellent choice for demanding applications that require exceptional performance and reliability
Key Features
- Superior noise immunity
- Fast response time
- Limited standby current consumption
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-89-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 250 V |
Id - Continuous Drain Current | 360 mA | Rds On - Drain-Source Resistance | 6 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3.5 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 150 C |
Pd - Power Dissipation | 1.6 W | Channel Mode | Depletion |
Brand | Microchip Technology | Configuration | Single |
Fall Time | 40 ns | Height | 1.6 mm |
Length | 4.6 mm | Product | MOSFET Small Signals |
Product Type ! | MOSFET | Rise Time ! | 25 ns |
Factory Pack Quantity | 2000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | FET |
Width | 2.6 mm | Unit Weight | 0.004233 oz |
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