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DS1225Y-200+
NVRAM NVSRAM Parallel 64Kbit 5V 28-Pin EDIPDS1225Y-200+
NVRAM NVSRAM Parallel 64Kbit 5V 28-Pin EDIP
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Manufacturer Part # : DS1225Y-200+
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Package/Case: EDIP-28
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Brand: Analog Devices
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Product Categories : Memory
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Service & Packaging
Service & Packaging
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Initiate the application within 90 days from the shipment date.
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DS1225Y-200+ DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
DS1225Y-200+ Description The Analog Devices DS1225AB-70IND is a 64 kbit non-volatile SRAM, organized in a 8K x 8 format. The DS1225AB-70IND has a separate lithium source and control circuitry that constantly detects VCC overcapacity. Its write cycle time is 200ns. DS1225Y-200+ Features 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles Low-power CMOS JEDEC standard 28-pin DIP package Read and write access times of 150 ns Full ±10% operating range Optional industrial temperature range of -40°C to +85°C, designated IND DS1225Y-200+ Applications Automotive Computers Embedded Systems
Key Features
- 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles Low-power CMOS JEDEC standard 28-pin DIP package Read and write access times of 150 ns Full ±10% operating range Optional industrial temperature range of -40°C to +85°C, designated IND
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | NVRAM | RoHS | Details |
| Package / Case | EDIP-28 | Interface Type | Parallel |
| Memory Size ! | 64 kbit | Organization | 8 k x 8 |
| Data Bus Width | 8 bit | Access Time | 200 ns |
| Supply Voltage - Max | 5.5 V | Supply Voltage - Min | 4.5 V |
| Operating Supply Current | 75 mA | Minimum Operating Temperature | 0 C |
| Maximum Operating Temperature ! | + 70 C | Series | DS1225Y |
| Brand | Analog Devices / Maxim Integrated | Height | 9.4 mm |
| Length | 39.12 mm | Mounting Style | Through Hole |
| Operating Supply Voltage ! | 5 V | Product Type ! | NVRAM |
| Factory Pack Quantity | 12 | Subcategory | Memory & Data Storage |
| Type | NVSRAM | Width | 18.29 mm |
| Part # Aliases | DS1225Y 90-1225Y+000 | Unit Weight | 1.042257 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is DS1225Y-200+?
The DS1225Y-200+ is a non-volatile static RAM (NVSRAM) integrated circuit designed by Maxim Integrated. It combines the functions of a static RAM and a non-volatile storage array, allowing it to retain data even when power is disconnected. This makes it suitable for applications requiring persistent memory, such as industrial automation, embedded systems, and battery-backed data logging.
How Does DS1225Y-200+ Work?
The DS1225Y-200+ operates by utilizing a CMOS static RAM with a self-contained lithium energy source and control circuitry. When power is applied, data can be read from and written to the device like a standard RAM. When power is removed, the lithium energy source powers the non-volatile circuitry, preserving the data. Upon re-application of power, the data is restored for read and write operations.
How Many Pins does DS1225Y-200+ have and What are the Functions of the Pinout Configuration?
The DS1225Y-200+ is housed in a 28-pin DIP (Dual Inline Package) package. The pinout configuration includes:
- VCC: Power supply pin.
- GND: Ground pin.
- CE, WE, OE: Chip enable, write enable, and output enable control pins.
- NC: No connect pin.
- A0-A13: Address input pins.
- DQ0-DQ7: Data input/output pins.
What are the Pros and Cons of DS1225Y-200+?
Pros:
- Non-Volatile Storage: Retains data without power, providing persistent memory.
- High Reliability: The integrated lithium energy source and control circuitry ensure reliable non-volatile operation.
- Fast Access Time: Operates as a fast static RAM for high-speed data access.
- Ease of Integration: Can be used as a drop-in replacement for equivalent static RAMs.
- Wide Voltage Range: Supports a wide operating voltage range for flexibility in various systems.
Cons:
- Cost: NVSRAMs typically have a higher cost compared to standard static RAMs.
- Complexity: Requires consideration of the non-volatile aspects during system design and testing.
- Package Size: The 28-pin DIP package may require more board space compared to surface-mount alternatives.
Are There Any Equivalents/Alternatives to DS1225Y-200+ for Recommendation?
- The DS1245Y-70+ from Maxim Integrated is a similar non-volatile static RAM with a different capacity and access time.
- Alternatives to the DS1225Y-200+ include the FM18W08 from Cypress Semiconductor and the M48Z02 from STMicroelectronics.
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