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DTC124XUA
Small Signal Bipolar Transistor
DTC124XUA
Small Signal Bipolar Transistor
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Service & Packaging
Service & Packaging
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All Parts Extended Quality Guarantee
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DTC124XUA DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The DTC124XUA is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. It is designed for use in various applications such as switching and amplification circuits.Key specifications of the DTC124XUA include a maximum collector current (IC) of 100mA, a maximum collector-base voltage (VCBO) of 50V, and a maximum emitter-base voltage (VEBO) of 5V. Additionally, the device has a DC current gain (hFE) ranging from 200 to 450, ensuring reliable amplification of input signals.The DTC124XUA is housed in a small SOT-323 surface-mount package, making it suitable for compact and space-constrained designs. Its low profile and lightweight construction also make it ideal for portable and handheld electronic devices.Furthermore, the transistor features a high-speed switching capability, with a transition frequency (ft) of 130MHz, enabling quick response times in switching applications.
Key Features
- NPN Silicon Digital Transistor
- Low collector-emitter saturation voltage
- Complementary PNP type: DTC124XKA
- Small surface mount package
- High DC current gain
- RoHS compliant
Application
- Automotive industry for electronic control units
- Industrial automation for control systems
- Consumer electronics for power supply units
- Telecommunications for signal amplifiers
- Medical devices for monitoring and sensing equipment
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | Yes | Rohs Code | Yes |
| Part Life Cycle Code | Not Recommended | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Additional Feature ! | DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 2.1 |
| Collector Current-Max (IC) | 0.05 A | Collector-Emitter Voltage-Max | 50 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | DC Current Gain-Min (hFE) | 68 |
| JESD-30 Code | R-PDSO-G3 | JESD-609 Code | e1 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | NPN |
| Power Dissipation-Max (Abs) | 0.2 W | Qualification Status ! | Not Qualified |
| Surface Mount ! | YES | Terminal Finish | TIN SILVER COPPER |
| Terminal Form ! | GULL WING | Terminal Position | DUAL |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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