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DZT5551
NPN transistor with a maximum voltage rating of 160V and a current rating of 0.6A in SOT223 package
DZT5551
NPN transistor with a maximum voltage rating of 160V and a current rating of 0.6A in SOT223 package
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Service & Packaging
Service & Packaging
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DZT5551 DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $0.667 | $0.67 |
| 10 | $0.557 | $5.57 |
| 30 | $0.504 | $15.12 |
| 100 | $0.450 | $45.00 |
| 500 | $0.399 | $199.50 |
| 1000 | $0.382 | $382.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
Features• BVCEO> 160V• BVEBO> 6V• IC = 600mA Continuous Collector Current• Low Saturation Voltage (150mV max @10mA)• hFE specified up to 50mA for a high gain hold up• Complementary PNP Type: DZT5401• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)• Halogen and Antimony Free. “Green” Device (Note 3)• Qualified to AEC-Q101 Standards for High ReliabilityApplications• High Voltage Amplification Applications• High Voltage Switching
Key Features
- Made from High-Reliability Materials
- Operates up to 200°C
- Suitable for Industrial and Commercial Applications
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | Bipolar Transistors - BJT | Mounting Style | SMD/SMT |
| Package / Case | SOT-223-4 | Transistor Polarity | NPN |
| Configuration | Single | Collector- Emitter Voltage VCEO Max | 160 V |
| Collector- Base Voltage VCBO | 180 V | Emitter- Base Voltage VEBO | 6 V |
| Maximum DC Collector Current | 600 mA | Pd - Power Dissipation | 1 W |
| Gain Bandwidth Product fT | 300 MHz | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature ! | + 150 C | Series | DZT5551 |
| Brand | Diodes Incorporated | Continuous Collector Current | 600 mA |
| DC Collector/Base Gain hfe Min | 80 at 1 mA, 5 V, 80 at 10 mA, 5 V, 30 at 50 mA, 5 V | Height | 1.65 mm |
| Length | 6.7 mm | Product Type ! | BJTs - Bipolar Transistors |
| Subcategory | Transistors | Technology | Si |
| Width | 3.7 mm | Unit Weight | 0.003951 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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