E3M0021120K

Name: E3M0021120K
Rating: 4.5 (10 reviews)

1200V 21mohm MOSFET SiC Automotive Gen 3 TO-247-4

7,196 Effective Inventory

E3M0021120K

Effective Inventory7,196

1200V 21mohm MOSFET SiC Automotive Gen 3 TO-247-4

Manufacturer Part # : E3M0021120K
Package/Case: TO-247-4
Part Status : ACTIVE
Brand: Wolfspeed, Inc.
Product Categories : Single FETs, MOSFETs
RoHS:

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

About Payment

We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.

If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

Example

Tape and Reel

Cut Tape

Tube or Tray

E3M0021120K DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for E3M0021120K or email to us: Email: [email protected], we will contact you in 12 hours.

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Details

The E3M0021120K is a high-power N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high voltage and high current applications. With a maximum voltage rating of 1200 volts and a continuous drain current of 104 amperes, this component is suitable for demanding power electronics projects. The power dissipation of the E3M0021120K is rated at 405 watts, allowing it to efficiently handle large amounts of power without overheating. The transistor is housed in a TO-247-4L package, a popular choice for high power discrete semiconductors due to its thermal performance and ease of mounting. The package is through-hole, making it suitable for applications where robust mechanical connections are required.

Key Features

Part number: E3M0021120K
Manufacturer: Generic
RoHS-compliant
Resistance value: 120 ohms
Power rating: 2 watts
Tolerance: ±10%

Application

Machine learning
Artificial intelligence
Robotics
Data analysis
Image processing
Security systems
Automotive applications
Industrial automation
Internet of Things (IoT)
Medical devices

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series	E	Package	Tube
Product Status	Active	FET Type	N-Channel
Technology	SiC (Silicon Carbide Junction Transistor)	Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	104A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	28.8mOhm @ 62.1A, 15V	Vgs(th) (Max) @ Id	3.6V @ 17.1mA
Gate Charge (Qg) (Max) @ Vgs	177 nC @ 15 V	Vgs (Max)	+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds	5100 pF @ 1000 V	Power Dissipation (Max)	405W (Tc)
Operating Temperature !	-55°C ~ 175°C (TJ)	Grade	Automotive
Qualification	AEC-Q101	Mounting Type	Through Hole
Supplier Device Package	TO-247-4L	Package / Case	TO-247-4