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FDS4410A
Suitable for applications requiring efficient power switching and amplification
FDS4410A
Suitable for applications requiring efficient power switching and amplification
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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FDS4410A DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $0.479 | $0.48 |
| 200 | $0.187 | $37.40 |
| 500 | $0.179 | $89.50 |
| 1000 | $0.176 | $176.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.Features ■ 10 A, 30 V. RDS(ON) = 13.5 mΩ @ VGS = 10 V RDS(ON) = 20 mΩ @ VGS = 4.5 V ■ Fast switching speed ■ Low gate charge ■ High performance trench technology for extremely low RDS(ON) ■ High power and current handling capability
Key Features
- 10 A, 30 V. RDS(ON) = 13.5 mΩ @ VGS = 10 V
- RDS(ON) = 20 mΩ @ VGS = 4.5 V
- Fast switching speed
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | SMD/SMT |
| Package / Case | SOIC-8 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 10 A | Rds On - Drain-Source Resistance | 13.5 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 2.5 W |
| Channel Mode | Enhancement | Brand | onsemi / Fairchild |
| Configuration | Single | Fall Time | 9 ns |
| Height | 1.75 mm | Length | 4.9 mm |
| Product Type ! | MOSFET | Rise Time ! | 5 ns |
| Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 28 ns |
| Typical Turn-On Delay Time | 9 ns | Width | 3.9 mm |
| Part # Aliases | FDS4410A_NL | Unit Weight | 0.006596 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is FDS4410A?
The FDS4410A is a dual N-channel PowerTrench MOSFET designed by Fairchild Semiconductor. It is commonly used in power management applications such as load switching, battery chargers, and DC-DC converters.
How Does FDS4410A Work?
The FDS4410A operates as a dual N-channel MOSFET, allowing it to control the flow of current in both directions. It is designed to handle high current loads efficiently with low on-resistance and high switching speed. The MOSFET is suitable for applications requiring high power efficiency and reliability.
How Many Pins does FDS4410A have and What are the Functions of the Pinout Configuration?
The FDS4410A is housed in an 8-pin SOIC (Small Outline Integrated Circuit) package. The pinout configuration includes:
- GATE1: Gate terminal for the first N-channel MOSFET.
- DRAIN1: Drain terminal for the first N-channel MOSFET.
- SOURCE1: Source terminal for the first N-channel MOSFET.
- GATE2: Gate terminal for the second N-channel MOSFET.
- DRAIN2: Drain terminal for the second N-channel MOSFET.
- SOURCE2: Source terminal for the second N-channel MOSFET.
- VSS: Power supply ground pin.
- VDD: Power supply voltage pin.
What are the Pros and Cons of FDS4410A?
Pros:
- High Power Efficiency: Efficient control of high current loads with low on-resistance.
- Fast Switching Speed: High-speed switching capability for rapid power management.
- Dual MOSFET Design: Enables bidirectional current flow control.
- Compact Package: 8-pin SOIC package for space-efficient designs.
Cons:
- Heat Dissipation: May require heat sinking for high-power applications to manage thermal issues.
- Driving Circuitry: Requires proper driving circuitry for optimal performance.
Are There Any Equivalents/Alternatives to FDS4410A for Recommendation?
- An equivalent part to the FDS4410A is the SI4410DY from Vishay.
- Alternatives to the FDS4410A include the IRF7319 from Infineon Technologies and the NDP6020P from ON Semiconductor.
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