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FQA19N20
N-type Power MOSFET 200V 23A TO-3P Package
FQA19N20
N-type Power MOSFET 200V 23A TO-3P Package
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FQA19N20 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The FQA19N20 is a 200V N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for use in power switching applications. It has a maximum drain-source voltage of 200V and a continuous drain current rating of 19A, making it suitable for medium to high-power circuits. This MOSFET features low on-resistance and a fast switching speed, allowing for efficient power conversion and minimal power loss. Its TO-3P packaging also allows for efficient heat dissipation, making it suitable for high-power applications.The FQA19N20 has a gate threshold voltage of 4V and a gate-source voltage (maximum) of ±20V. It has a low input capacitance, making it suitable for high-frequency switching applications. The device also has a low gate charge, reducing the amount of drive power needed to switch it on and off.Additionally, the FQA19N20 has a high avalanche energy rating, providing protection against voltage spikes and overcurrent conditions. This makes it suitable for use in rugged applications where reliability is crucial.
Key Features
- 19A, 200V N-Channel MOSFET
- Low ON resistance
- High speed switching performance
- Enhanced avalanche ruggedness
- Low gate charge
- Designed for high power applications
- RoHS compliant
- TO-3PN package
- Continuous drain current of 19A
- Gate threshold voltage of 2V
Application
- Switching power supplies
- Motor control
- Reverse battery protection
- DC-DC converters
- Inverter applications
- Battery management systems
- Industrial automation
- Electric vehicles
- Solar energy systems
- Uninterruptible power supplies
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | Through Hole |
| Package / Case | TO-3PN-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 200 V |
| Id - Continuous Drain Current | 23 A | Rds On - Drain-Source Resistance | 150 mOhms |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 190 W |
| Channel Mode | Enhancement | Brand | onsemi / Fairchild |
| Configuration | Single | Fall Time | 80 ns |
| Height | 20.1 mm | Length | 16.2 mm |
| Product Type ! | MOSFET | Rise Time ! | 190 ns |
| Factory Pack Quantity | 450 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Type | MOSFET |
| Typical Turn-Off Delay Time | 55 ns | Typical Turn-On Delay Time | 20 ns |
| Width | 5 mm | Unit Weight | 0.162260 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is FQA19N20?
The FQA19N20 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high power switching applications. It is capable of handling high current and voltage levels, making it suitable for power supplies, motor control, and other high-power electronics applications.
How Does FQA19N20 Work?
The FQA19N20 works by controlling the flow of current between the source and drain terminals using an electric field. When a voltage is applied to the gate terminal, the MOSFET can either allow or block the current flow, serving as a high-power switch. This functionality makes it suitable for controlling high-power loads in various electronic systems.
How Many Pins does FQA19N20 have and What are the Functions of the Pinout Configuration?
The FQA19N20 is housed in a TO-3P package. The pinout configuration includes:
- G (Gate): Control terminal for turning the MOSFET on and off.
- D (Drain): Connection for the high-power output.
- S (Source): Connection for the high-power input or ground.
- Body: Usually connected to the source or a heat sink for thermal management.
What are the Pros and Cons of FQA19N20?
Pros:
- High Power Handling: Capable of handling high current and voltage levels for power applications.
- Low On-Resistance: Provides efficient conduction with low power dissipation.
- Robust Construction: Designed for ruggedness and reliability in demanding environments.
- Wide Operating Temperature Range: Suitable for operation in various temperature conditions.
Cons:
- Physical Size: The TO-3P package may be relatively large compared to other package types.
- Gate Drive Requirements: Requires proper voltage levels and drive capability for efficient switching.
- Gate Capacitance: The gate-source capacitance can affect high-frequency performance in some applications.
Are There Any Equivalents/Alternatives to FQA19N20 for Recommendation?
- The IRF840 from Infineon and the STP19NF20 from STMicroelectronics are alternatives to the FQA19N20 for high-power switching applications.
- Equivalent parts to the FQA19N20 include the HUF75652P3 from Vishay and the HGTG19N120CN from Fairchild Semiconductor.
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