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FQA19N20C
High Voltage N-Channel MOSFETFQA19N20C
High Voltage N-Channel MOSFET
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Service & Packaging
Service & Packaging
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FQA19N20C DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The FQA19N20C MOSFET, manufactured by Fairchild Semiconductor, is a high-quality electronic component designed for various power management applications. It features an N-channel type with a maximum drain-source voltage of 200 volts (V) and a continuous drain current of 19 amperes (A). The package type can vary, but common options include TO-220 and TO-247. This MOSFET is widely used in power supplies, motor control circuits, lighting applications, and other power management systems due to its efficient switching capabilities and low on-resistance
Key Features
- 21.8A, 200V, RDS(on) = 0.17Ω @VGS = 10 V
- Low gate charge ( typical 40.5 nC)
- Low Crss ( typical 85 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | Through Hole |
| Package / Case | TO-3PN-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 200 V |
| Id - Continuous Drain Current | 21.8 A | Rds On - Drain-Source Resistance | 170 mOhms |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature ! | + 150 C | Pd - Power Dissipation | 180 W |
| Channel Mode | Enhancement | Brand | onsemi / Fairchild |
| Configuration | Single | Fall Time | 115 ns |
| Forward Transconductance - Min | 10.8 S | Height | 20.1 mm |
| Length | 16.2 mm | Product Type ! | MOSFET |
| Rise Time ! | 150 ns | Factory Pack Quantity | 30 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Type | MOSFET | Typical Turn-Off Delay Time | 135 ns |
| Typical Turn-On Delay Time | 15 ns | Width | 5 mm |
| Part # Aliases | FQA19N20C_NL | Unit Weight | 0.162260 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is FQA19N20C?
The FQA19N20C is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for use in high-power switching applications. It is commonly used in power supplies, motor control, and power management circuits in various electronic devices and systems.
How Does FQA19N20C Work?
The FQA19N20C works as a power switching device, enabling or disabling the flow of high-power currents in electronic circuits. As an N-channel MOSFET, it can handle significant power levels and functions as a controlled switch activated by a gate signal. Its low on-state resistance and high current-handling capabilities make it suitable for power-critical applications.
How Many Pins does FQA19N20C have and What are the Functions of the Pinout Configuration?
The FQA19N20C is typically housed in a TO-3PN (3-pin, through-hole package) or a TO-220 (3-pin, through-hole package) package, and it features the following pinout configuration:
- G (or GATE): The pin used to control the MOSFET by applying a voltage to turn it on or off.
- D (or DRAIN): The pin that connects to the load or the power supply's positive terminal.
- S (or SOURCE): The pin connected to the ground or the power supply's negative terminal.
What are the Pros and Cons of FQA19N20C?
Pros:
- High Power Handling: Capable of handling high currents and voltages in power electronics applications.
- Low On-State Resistance: Enables efficient power switching with minimal power loss.
- Reliable Switching: Provides fast switching times for improved system performance.
- Robust Construction: Designed to withstand high power and temperature environments.
Cons:
- Gate Drive Requirements: Requires proper gate drive circuitry for optimal performance and reliability.
- Switching Losses: May produce switching losses in high-frequency applications.
- Heat Dissipation: The device may require heatsinking for thermal management in high-power designs.
Are There Any Equivalents/Alternatives to FQA19N20C for Recommendation?
Similar N-channel MOSFET alternatives to the FQA19N20C include the IRF1404 from Infineon Technologies and the STP16NF06 from STMicroelectronics.
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