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FQT7N10L
Power Field-Effect TransistorFQT7N10L
Power Field-Effect Transistor
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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FQT7N10L DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
In summary, FQT7N10L from ON Semiconductor is a robust and efficient N-channel MOSFET tailored for power management applications. Its high voltage rating, combined with features such as low on-resistance and high switching speed, makes it well-suited for demanding power handling requirements. Engineers and designers can rely on this component to deliver reliable performance and contribute to the efficient operation of electronic systems requiring effective power management
Key Features
- This device features high frequency performance with low input capacitance
- Its compact design ensures efficient heat dissipation and reduced thermal impedance
- The FQT7N10L has a maximum drain current of 6.2A for reliable operation
- This MOSFET is designed for high speed switching applications with low on-resistance
- The TO-252 package allows for efficient heat dissipation and compact design
- This device has a maximum VDS rating of 100V making it suitable for various industrial applications
Application
- Sleek and smart devices
- Practical home gadgets
- Efficient and reliable products
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Active | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Avalanche Energy Rating (Eas) | 50 mJ |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 V | Drain Current-Max (Abs) (ID) | 1.7 A |
| Drain Current-Max (ID) | 1.7 A | Drain-source On Resistance-Max | 0.38 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 15 pF |
| JEDEC-95 Code | TO-261AA | JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 | Number of Terminals | 4 |
| Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation Ambient-Max | 2 W |
| Power Dissipation-Max (Abs) | 2 W | Pulsed Drain Current-Max (IDM) | 6.8 A |
| Surface Mount ! | YES | Terminal Form ! | GULL WING |
| Terminal Position | DUAL | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | Turn-off Time-Max (toff) | 155 ns |
| Turn-on Time-Max (ton) | 240 ns |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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4,695 In Stock
Cargo cycle: 3~7 Days
The minimum order is 1
