FZT603TA
NPN Bipolar Transistor, rated at 80V, 2A, with a power dissipation of 3W, packaged in SOT223FZT603TA
NPN Bipolar Transistor, rated at 80V, 2A, with a power dissipation of 3W, packaged in SOT223
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Manufacturer Part # : FZT603TA
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Package/Case: SOT
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Brand: DIODES INCORPORATED
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Product Categories : Single Bipolar Transistors
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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FZT603TA DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
5 | $0.434 | $2.17 |
50 | $0.346 | $17.30 |
150 | $0.309 | $46.35 |
500 | $0.261 | $130.50 |
2500 | $0.199 | $497.50 |
5000 | $0.187 | $935.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
- The FZT603TA is a SOT-223 NPN silicon planar medium power Darlington transistor. It is a power bipolar transistor with a maximum collector current (I(C)) of 2A and a collector-emitter breakdown voltage (V(BR)CEO) of 80V. This transistor has 1 element, is of NPN type, and is made of silicon housed in a plastic/epoxy package with 4 pins. It is designed for use in medium power amplification and switching applications where high gain and high current capability are required
Key Features
- BVCEO> 80V
- BVCBO> 100V
- IC = 2A High Continuous Current
- Useful hFE up to 6A
- Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
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Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Transferred |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Case Connection | COLLECTOR | Collector Current-Max (IC) | 2 A |
Collector-Emitter Voltage-Max | 80 V | Configuration | DARLINGTON |
DC Current Gain-Min (hFE) | 2000 | JESD-30 Code | R-PDSO-G4 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 4 |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | NPN |
Qualification Status ! | Not Qualified | Surface Mount ! | YES |
Terminal Finish | Matte Tin (Sn) | Terminal Form ! | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 40 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Transition Frequency-Nom (fT) | 150 MHz | VCEsat-Max | 0.86 V |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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