G3R20MT17K
Effect Transistor for Power Applications G3R20MT17K, G3R20MT17K High-Power MOSFET, G3R20MT17K Power FET, Power Field-Effect Transistor G3R20MT17KG3R20MT17K
Effect Transistor for Power Applications G3R20MT17K, G3R20MT17K High-Power MOSFET, G3R20MT17K Power FET, Power Field-Effect Transistor G3R20MT17K
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Manufacturer Part # : G3R20MT17K
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Package/Case: TO-247-4
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Part Status : ACTIVE
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Brand: GeneSiC Semiconductor
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Product Categories : Single FETs, MOSFETs
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RoHS:
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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Tube or Tray
G3R20MT17K DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The G3R20MT17K is a high-power Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a N-channel configuration. It is designed for heavy-duty applications where high current and voltage handling capabilities are required. The numeric values in the code provide specific details about the component: - "G3" indicates the device series or family. - "R20" represents the maximum continuous drain current rating, which is 20A in this case. - "MT" denotes the package type, in this instance a TO247-4 package. - "17" signifies the maximum drain-source voltage rating, which is 1700V for this MOSFET. - "K" may denote certain manufacturing specifications or revisions. This MOSFET is capable of handling a continuous drain current of 20A and can withstand voltages up to 1700V, making it suitable for use in high-power applications such as inverters, motor drives, power supplies, and industrial control systems. The TO247-4 package ensures efficient heat dissipation, allowing for reliable operation under high temperatures. The SiC technology offers advantages over traditional silicon-based devices, including reduced switching losses, higher efficiency, and better performance at high frequencies.
Key Features
- High torque motor
- 20 kW power output
- 3 phase
- Compact design
- IP65 protection rating
- Efficient cooling system
- Low noise and vibration levels
- Designed for industrial applications
- Easy installation and maintenance
Application
- Industrial automation
- Robotics
- Motion control systems
- Machine vision
- Medical devices
- Automotive industry
- Aerospace industry
- Material handling
- Packaging machinery
- Pharmaceutical industry
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | G3R™ | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) | Drain to Source Voltage (Vdss) | 1700 V |
Current - Continuous Drain (Id) @ 25°C | 124A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 26mOhm @ 75A, 15V | Vgs(th) (Max) @ Id | 2.7V @ 15mA |
Gate Charge (Qg) (Max) @ Vgs | 400 nC @ 15 V | Vgs (Max) | ±15V |
Input Capacitance (Ciss) (Max) @ Vds | 10187 pF @ 1000 V | Power Dissipation (Max) | 809W (Tc) |
Operating Temperature ! | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | TO-247-4 | Package / Case | TO-247-4 |
Base Product Number | G3R20 |
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