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G3R30MT12K
G3R30MT12K - 1200V 30m TO-247-4 G3R SiC MOSFET
G3R30MT12K
G3R30MT12K - 1200V 30m TO-247-4 G3R SiC MOSFET
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Manufacturer Part # : G3R30MT12K
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Package/Case: TO-247-4
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Part Status : ACTIVE
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Brand: GeneSiC Semiconductor
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Product Categories : Single FETs, MOSFETs
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RoHS:
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
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We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.
If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
Example
Tape and Reel
Cut Tape
Tube or Tray
G3R30MT12K DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The G3R30MT12K is a Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for high-power applications. It is a N-Channel transistor with a maximum current rating of 90A and comes in a TO247-4 package, which is a popular package type for power transistors due to its ability to handle high currents and voltages. SiC MOSFETs like the G3R30MT12K offer several advantages over traditional silicon transistors. They have lower on-state resistance, enabling higher efficiency and lower power losses. SiC also has a higher thermal conductivity than silicon, allowing for better heat dissipation, which is crucial in high-power applications. The G3R30MT12K is suitable for a wide range of applications, including power supplies, motor control, renewable energy systems, and electric vehicles. Its high current rating makes it ideal for high-power circuits where efficiency and reliability are critical.
Key Features
- Three-phase
- 30 horsepower
- 12,000 RPM speed
- Compact design
- High performance
- State-of-the-art technology
- Efficient cooling system
- Smooth operation
- Low maintenance
- Advanced control options
Application
- Industrial automation
- Power distribution
- Renewable energy
- Electric vehicle charging stations
- UPS systems
- Telecommunication equipment
- Medical equipment
- Solar inverters
- Emergency lighting systems
- Energy storage systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Series | G3R™ | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) | Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 50A, 15V | Vgs(th) (Max) @ Id | 2.69V @ 12mA |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 15 V | Vgs (Max) | ±15V |
| Input Capacitance (Ciss) (Max) @ Vds | 3901 pF @ 800 V | Power Dissipation (Max) | 400W (Tc) |
| Operating Temperature ! | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 | Package / Case | TO-247-4 |
| Base Product Number | G3R30 |
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