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HUF75343P3
High current, low on-resistance N-type MOSFET with a 55V drain-to-source voltage capability
HUF75343P3
High current, low on-resistance N-type MOSFET with a 55V drain-to-source voltage capability
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Service & Packaging
Service & Packaging
About After Sales Service
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Initiate the application within 90 days from the shipment date.
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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HUF75343P3 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The HUF75343P3 is an exceptional N-channel UltraFET power MOSFET designed for high-speed switching applications in a variety of high-power electronic devices. With a 55V drain-source voltage rating and a continuous drain current of 75A, this MOSFET is well-equipped to handle heavy power loads with its low on-resistance of 4.5mOhms, ensuring efficient power transfer and reduced power losses. Its TO-220 package with through-hole mounting makes it easy to integrate into existing circuit designs, while its gate charge of 114nC allows for precise and rapid switching control
Key Features
- 75A, 55V
- Simulation Models
- - Temperature Compensating PSPICE® and SABER™ Models
- - Thermal Impedance PSPICE™ and SABER Models
- Available on the WEB at:
- www.fairchildsemi.com
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- - TB334, “Guidelines for Soldering Surface Mount
- Components to PC Boards”
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | MOSFET | RoHS | Details |
| Technology | Si | Mounting Style | Through Hole |
| Package / Case | TO-220-3 | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 55 V |
| Id - Continuous Drain Current | 75 A | Rds On - Drain-Source Resistance | 9 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature ! | + 175 C | Pd - Power Dissipation | 270 W |
| Channel Mode | Enhancement | Brand | onsemi / Fairchild |
| Configuration | Single | Fall Time | 18 ns |
| Height | 16.3 mm | Length | 10.67 mm |
| Product Type ! | MOSFET | Rise Time ! | 75 ns |
| Factory Pack Quantity | 400 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Type | MOSFET |
| Typical Turn-Off Delay Time | 32 ns | Typical Turn-On Delay Time | 9 ns |
| Width | 4.7 mm | Part # Aliases | HUF75343P3_NL |
| Unit Weight | 0.068784 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is HUF75343P3?
The HUF75343P3 is a N-channel, logic-level, power MOSFET (metal–oxide–semiconductor field-effect transistor) designed for high current and high-speed switching applications. It is commonly used in power supplies, motor control, and automotive systems due to its robust performance and low on-resistance.
How Does HUF75343P3 Work?
The HUF75343P3 operates as a high-current switch, allowing or restricting the flow of electrical current based on the applied voltage at its gate terminal. When the gate voltage meets the specified threshold, the MOSFET turns on, creating a low-resistance path for current flow. This enables efficient power switching and control in various electronic circuits.
How Many Pins does HUF75343P3 have and What are the Functions of the Pinout Configuration?
The HUF75343P3 is housed in a TO-220 package, which typically includes three pins: the gate (G), the drain (D), and the source (S). The pinout configuration functions as follows:
- G (Gate): This pin controls the conductivity of the MOSFET by applying a voltage to turn it on or off.
- D (Drain): Current flows into or out of this pin, depending on the MOSFET's operating mode.
- S (Source): Current flows out of this pin when the MOSFET is in its conducting state.
What are the Pros and Cons of HUF75343P3?
Pros:
- High Current Handling: Capable of handling high currents, suitable for power applications.
- Low On-Resistance: Minimizes power dissipation and heat generation during operation.
- Robust Construction: Designed for reliable performance in demanding environments.
- High-Speed Switching: Enables rapid on/off transitions, important for efficient power control.
Cons:
- Voltage Sensitivity: The gate threshold voltage must be carefully managed for proper operation.
- Driving Circuitry: May require careful consideration of gate drive circuitry for optimal performance.
- Heat Dissipation: In high-power applications, heat sinking or thermal management may be necessary.
Are There Any Equivalents/Alternatives to HUF75343P3 for Recommendation?
Alternatives to the HUF75343P3 include the IRF840PBF from Infineon and the FDP7030BL from Fairchild Semiconductor.
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