HY57V28820HCT-H

Name: HY57V28820HCT-H
Rating: 4.5 (10 reviews)

HY57V28820HCT-H is a high-speed CMOS dynamic random access memory (DRAM) chip with a capacity of 256 Mb

6,060 Effective Inventory

HY57V28820HCT-H

Effective Inventory6,060

HY57V28820HCT-H is a high-speed CMOS dynamic random access memory (DRAM) chip with a capacity of 256 Mb

Manufacturer Part # : HY57V28820HCT-H
Package/Case: TSOP54
Brand: HYNIX
Product Categories : Memory

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HY57V28820HCT-H DataSheet

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Details

HY57V28820HCT-H is a high-speed CMOS dynamic random access memory (DRAM) chip with a capacity of 256 Mb. It is organized in 4 banks of 8M x 8 bits and operates at a maximum clock frequency of 133MHz. It features Fast Page Mode, Single Page Mode, and Burst Read operations. This chip is commonly used in high-performance computing and networking applications.

Key Features

512Mb SDRAM
3.3V power supply
High speed data transfer
Low power consumption
Double data rate architecture
Programmable CAS latency: 2,3
Auto refresh and self refresh mode
64ms, 4K refresh rate
Available in TSOP-II package

Application

Computer motherboards
Graphics cards
Networking equipment
Telecommunications devices
Industrial control systems
Embedded systems
Automotive electronics
Medical devices
Consumer electronics
Military and aerospace applications

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code	No	Part Life Cycle Code	Obsolete
Part Package Code	TSOP2	Pin Count !	54
Reach Compliance Code		ECCN Code	EAR99
HTS Code !	8542.32.00.02	Access Mode !	FOUR BANK PAGE BURST
Access Time-Max	5.4 ns	Additional Feature !	AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)	133 MHz	I/O Type	COMMON
Interleaved Burst Length	1,2,4,8	JESD-30 Code	R-PDSO-G54
Length	22.238 mm	Memory Density	134217728 bit
Memory IC Type	SYNCHRONOUS DRAM	Memory Width	8
Number of Functions	1	Number of Ports !	1
Number of Terminals	54	Number of Words	16777216 words
Number of Words Code	16000000	Operating Mode !	SYNCHRONOUS
Operating Temperature-Max	70 °C	Operating Temperature-Min
Organization	16MX8	Output Characteristics	3-STATE
Package Body Material	PLASTIC/EPOXY	Package Code	TSOP2
Package Equivalence Code	TSOP54,.46,32	Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE, THIN PROFILE	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Power Supplies !	3.3 V	Qualification Status !	Not Qualified
Refresh Cycles	4096	Seated Height-Max	1.194 mm
Self Refresh	YES	Sequential Burst Length	1,2,4,8,FP
Standby Current-Max	0.002 A	Supply Current-Max	0.22 mA
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	3 V
Supply Voltage-Nom (Vsup)	3.3 V	Surface Mount !	YES
Technology	CMOS	Temperature Grade !	COMMERCIAL
Terminal Form !	GULL WING	Terminal Pitch !	0.8 mm
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Width	10.16 mm

Specification Comparison

HY57V281620HCT-H vs HY57V28820AT-H vs HY57V28820HCT-H HY57V281620ETP-H vs HY57V28820AT-H vs HY57V28820HCT-H

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification HY57V28820HCT-H PDF Download

FAQs

What is HY57V28820HCT-H?

The HY57V28820HCT-H is a high-speed CMOS synchronous DRAM (SDRAM) designed by Hynix Semiconductor. It is ideal for applications requiring fast and efficient memory access, such as networking equipment, telecommunications systems, and graphics processing units.

How Does HY57V28820HCT-H Work?

The HY57V28820HCT-H operates as a synchronous dynamic random-access memory, providing high-speed data storage and retrieval. It utilizes a synchronous interface for precise data communication with the system. The SDRAM features burst mode access and on-chip refresh, optimizing memory access performance.

How Many Pins does HY57V28820HCT-H have and What are the Functions of the Pinout Configuration?

The HY57V28820HCT-H is housed in a 54-pin TSOP-II (Thin Small Outline Package) package. The pinout configuration includes:

VDD, VDDQ: Power supply pins for core and I/O interface.
VSS, VSSQ: Ground connections for core and I/O interface.
DQ0-DQ17: Data input/output pins.
CLK: Clock input pin for synchronous operation.
WE, CAS, RAS: Control pins for write enable, column address strobe, and row address strobe.
CS: Chip select pin for device activation.
DM: Data mask for write data.

What are the Pros and Cons of HY57V28820HCT-H?

Pros:

High Speed: Offers fast access times for rapid data processing.
Synchronous Operation: Synchronizes with the system clock for precise data transfer.
Burst Mode Access: Supports burst read and write operations for efficient data retrieval.
On-Chip Refresh: Includes auto-refresh capabilities, reducing the need for external refresh circuitry.
Wide Operating Voltage Range: Works with a broad supply voltage range for compatibility in various systems.

Cons:

Complex Timing: Requires careful timing considerations for proper operation.
Power Consumption: High-speed operation may lead to increased power consumption.
Interface Complexity: Synchronous interface may require additional control signals for efficient data transfer.

Are There Any Equivalents/Alternatives to HY57V28820HCT-H for Recommendation?

The MT48LC16M16A2 from Micron Technology is a similar high-speed SDRAM option.
Alternatives to the HY57V28820HCT-H include the IS42S16100E from Integrated Silicon Solution Inc. (ISSI) and the CY7C1041DV33 from Cypress Semiconductor.