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IHW20N120R2
IHW20N120R2 - 1200V IGBT Transistor with Reverse Conducting Feature
IHW20N120R2
IHW20N120R2 - 1200V IGBT Transistor with Reverse Conducting Feature
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Manufacturer Part # : IHW20N120R2
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Package/Case: TO247-3
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Brand: Infineon Technologies
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Product Categories : Single IGBTs
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
About Payment
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If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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IHW20N120R2 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Reverse Conducting IGBT with monolithic body diodeFeatures:• Powerful monolithic Body Diode with very low forward voltage• Body diode clamps negative voltages• Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)• Low EMI• Qualified according to JEDEC1 for target applications• Pb-free lead plating; RoHS compliant• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/Applications:• Inductive Cooking• Soft Switching Applications
Key Features
- Powerful monolithic Body Diode with very low forward voltage
- Body diode clamps negative voltages
- Trench and Fieldstop technology for 1200 V applications offers :
- - very tight parameter distribution
- - high ruggedness, temperature stable behavior
- NPT technology offers easy parallel switching capability due to
- positive temperature coefficient in VCE(sat)
- Low EMI
- Qualified according to JEDEC1 for target applications
- Pb-free lead plating; RoHS compliant
- Complete product spectrum and PSpice Models :
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | IGBT Transistors | RoHS | Details |
| Technology | Si | Package / Case | TO-247-3 |
| Mounting Style | Through Hole | Configuration | Single |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 1.85 V |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 20 A |
| Pd - Power Dissipation | 330 W | Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature ! | + 150 C | Brand | Infineon Technologies |
| Continuous Collector Current Ic Max | 20 A | Height | 20.95 mm |
| Length | 15.9 mm | Product Type ! | IGBT Transistors |
| Factory Pack Quantity | 240 | Subcategory | IGBTs |
| Width | 5.3 mm | Part # Aliases | SP000212015 IHW20N120R2XK |
| Unit Weight | 1.340411 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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