IPB017N10N5ATMA1

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Trans MOSFET N-CH 100V 180A Automotive 8-Pin(7+Tab) D2PAK T/R

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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IPB017N10N5ATMA1 DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for IPB017N10N5ATMA1 or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The IPB017N10N5ATMA1 is a powerful N-channel silicon metal-oxide semiconductor FET designed for high-performance applications. With a current rating of 180A and a voltage rating of 100V, this transistor is capable of handling large amounts of power with ease

Key Features

  • Ideal for high frequency switching and sync. rec.
  • Optimized technology for DC/DC converters
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance RDS(on)
  • N-channel, normal level
  • 100% avalanche tested
  • Pb-free plating; RoHS compliant
  • Qualified according to JEDEC1) for target applications
  • Halogen-free according to IEC61249-2-21

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TAPE & REEL addProductInfo RoHS compliant, non dry
packageNameMarketing D2PAK 7-pin msl 1
halogenFree yes customerInfo STANDARD
fgr W18 productClassification ASP
productStatusInfo active and preferred hfgr A
packageName PG-TO263-7 pbFree yes
moistureProtPack NON DRY fourBlockPackageName PG-TO263-7-3
rohsCompliant yes opn IPB017N10N5ATMA1
completelyPbFree no sapMatnrSali SP001227028

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification IPB017N10N5ATMA1 PDF Download

FAQs

What is IPB017N10N5ATMA1?

The IPB017N10N5ATMA1 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Infineon Technologies. It is an N-channel, 100V, 16A MOSFET suitable for high-power switching applications in power supplies, motor control, and electronic load switching.

How Does IPB017N10N5ATMA1 Work?

The IPB017N10N5ATMA1 operates as a voltage-controlled switch, allowing or blocking the flow of current based on the voltage applied to its gate terminal. It is designed to handle high currents and voltages, making it suitable for power management applications. When the gate-source voltage reaches a certain threshold, the MOSFET turns on and conducts current between the drain and source terminals.

How Many Pins does IPB017N10N5ATMA1 have and What are the Functions of the Pinout Configuration?

The IPB017N10N5ATMA1 is housed in a TO263-3 package. The pinout configuration includes:

  • GATE: Gate terminal for controlling the MOSFET's conduction.
  • DRAIN: Terminal connected to the load and the more positive voltage.
  • SOURCE: Terminal connected to ground or the more negative voltage.

What are the Pros and Cons of IPB017N10N5ATMA1?

Pros:

  • High Voltage Rating: The 100V rating allows for usage in a wide range of power applications.
  • High Current Handling: Capable of handling up to 16A of continuous current.
  • Low ON Resistance: Efficient power switching with reduced power dissipation.
  • Robustness: Designed to withstand high currents and temperatures.
  • TO263 Package: TO263-3 package offers good thermal performance and ease of mounting.

Cons:

  • Gate Drive Requirements: Requires careful consideration of gate drive voltage and current for optimal performance.
  • Switching Speed: May have limitations in high-frequency switching applications.
  • Heat Dissipation: High currents may require additional thermal management considerations.

Are There Any Equivalents/Alternatives to IPB017N10N5ATMA1 for Recommendation?

Equivalents to the IPB017N10N5ATMA1 include the IPP017N10N5ATMA1 from Infineon Technologies and the IRFB7440PbF from Infineon Technologies. Alternatives from other manufacturers include the FDPF16N50T from Fairchild Semiconductor and the STP16NF06 from STMicroelectronics.

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