IPB027N10N3GATMA1

Name: IPB027N10N3GATMA1
Rating: 4.5 (10 reviews)

Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R

7,298 Effective Inventory

IPB027N10N3GATMA1

Effective Inventory7,298

Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R

Manufacturer Part # : IPB027N10N3GATMA1
Package/Case: D2PAK-3
Brand: Infineon Technologies
Product Categories : Single FETs, MOSFETs

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

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About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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IPB027N10N3GATMA1 DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Please submit RFQ for IPB027N10N3GATMA1 or email to us: Email: [email protected], we will contact you in 12 hours.

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Details

Enhance your power management systems with the IPB027N10N3GATMA1 Power Field-Effect Transistor. This high-quality N-Channel Silicon MOSFET offers a maximum current rating of 120A and a voltage rating of 100V, making it ideal for a wide range of applications. The low on-state resistance of 0.0027ohm ensures efficient power delivery and minimal heat generation, while the TO-263AB package facilitates easy installation and heat dissipation. The green plastic housing not only adds a pop of color to your design but also provides robust protection against external elements. With its 3-pin configuration, this MOSFET is designed for simple integration and reliable performance in diverse electronic systems

Key Features

N-channel, normal level
Excellent gate charge x RDS(on) product (FOM)
Very low on-resistance RDS(on)
175°C operating temperature
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Ideal for high frequency switching and synchronous rectification
Halogen-free according to IEC61249-2-21

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking	TAPE & REEL	addProductInfo	MS, RoHS compliant, non dry
packageNameMarketing	D2PAK	msl	1
halogenFree	yes	customerInfo	STANDARD
fgr	L39	productClassification	COM
productStatusInfo	active	hfgr	A
packageName	PG-TO263-3	pbFree	yes
moistureProtPack	NON DRY	fourBlockPackageName	PG-TO263-3-2
rohsCompliant	yes	opn	IPB027N10N3GATMA1
completelyPbFree	no	sapMatnrSali	SP000506508

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification IPB027N10N3GATMA1 PDF Download

FAQs

What is IPB027N10N3GATMA1?

The IPB027N10N3GATMA1 is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed by Infineon Technologies. It is a N-channel enhancement mode transistor that is suitable for high-current, high-efficiency power applications such as motor control, DC-DC conversion, and power supplies.

How Does IPB027N10N3GATMA1 Work?

The IPB027N10N3GATMA1 operates by controlling the flow of current between the drain and source terminals through the application of a gate voltage. When a suitable voltage is applied to the gate, the MOSFET allows current to flow, enabling efficient power switching and amplification in various electronic circuits.

How Many Pins does IPB027N10N3GATMA1 have and What are the Functions of the Pinout Configuration?

The IPB027N10N3GATMA1 is housed in a TO-263-3 package. The pinout configuration includes:

G (Gate): Controls the conduction of the MOSFET.
D (Drain): Connection for the high-current path.
S (Source): Connection for the ground reference.

What are the Pros and Cons of IPB027N10N3GATMA1?

Pros:

High Current Capability: Capable of handling high levels of current flow.
Low On-Resistance: Offers low resistance when conducting, minimizing power loss and improving efficiency.
High Switching Speed: Enables rapid switching for high-frequency applications.
Robustness: Designed to withstand high voltage and current stress.
Thermal Performance: Efficient thermal management for reliable operation under high power conditions.

Cons:

Gate Drive Complexity: May require careful attention to gate drive circuitry for optimal performance.
Cost: High-power MOSFETs like the IPB027N10N3GATMA1 may have a higher cost compared to lower-power alternatives.

Are There Any Equivalents/Alternatives to IPB027N10N3GATMA1 for Recommendation?

Alternatives to the IPB027N10N3GATMA1 include the IRF1405PBF from Infineon Technologies and the STP60NF10 from STMicroelectronics.

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IPB027N10N3GATMA1

IPB027N10N3GATMA1

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