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IPB117N20NFD
High-power N-channel MOSFET designed for switching applicationsIPB117N20NFD
High-power N-channel MOSFET designed for switching applications
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All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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IPB117N20NFD DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $4.447 | $4.45 |
| 10 | $3.842 | $38.42 |
| 30 | $3.483 | $104.49 |
| 100 | $3.118 | $311.80 |
| 500 | $2.950 | $1,475.00 |
| 1000 | $2.875 | $2,875.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
Offering a maximum current rating of 84A and a voltage rating of 200V, the IPB117N20NFD is a robust N-Channel Silicon MOSFET. Its low on-state resistance of 0.0117ohm makes it well-suited for high-power applications that require efficient performance. Housed in a TO-263AB package (D2PAK-3/2), this device enables effective heat dissipation. Additionally, its use of green plastic material reflects a commitment to environmental responsibility
Key Features
- N-channel; Normal level
- Fast Diode (FD) with reduced Qrr
- Optimized for hard commutation ruggedness
- Very low on-resistance RDS(on)
- 175°C operating temperature
- Pb-free plating; RoHS compliant
- Qualified according to JEDEC1) for target applications
- Halogen-free according to IEC61249-2-21
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Avalanche Energy Rating (Eas) | 375 mJ | Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 200 V |
| Drain Current-Max (ID) | 84 A | Drain-source On Resistance-Max | 0.0117 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-263AB |
| JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 2 | Operating Mode ! | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 °C | Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 336 A | Surface Mount ! | YES |
| Terminal Finish | TIN | Terminal Form ! | GULL WING |
| Terminal Position | SINGLE | Transistor Element Material | SILICON |
| Manufacturer | Infineon | Product Category ! | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | TO-263-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 200 V | Id - Continuous Drain Current | 84 A |
| Rds On - Drain-Source Resistance | 10.3 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 87 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 175 C |
| Pd - Power Dissipation | 300 W | Channel Mode | Enhancement |
| Tradename | OptiMOS | Series | OptiMOS Fast Diode |
| Brand | Infineon Technologies | Fall Time | 8 ns |
| Forward Transconductance - Min | 70 S | Height | 4.4 mm |
| Length | 10 mm | Product Type ! | MOSFET |
| Rise Time ! | 10 ns | Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 24 ns | Typical Turn-On Delay Time | 13 ns |
| Width | 9.25 mm | Part # Aliases | IPB117N20NFDATMA1 SP001107232 IPB117N20NFDATMA1 |
| Unit Weight | 0.139332 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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