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IRF631
50V N-channel MOSFET with 9A current rating
IRF631
50V N-channel MOSFET with 9A current rating
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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IRF631 DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $0.816 | $0.82 |
| 200 | $0.317 | $63.40 |
| 500 | $0.306 | $153.00 |
| 1000 | $0.300 | $300.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The IRF631 is a N-channel power MOSFET transistor designed for high-performance and power efficiency applications. It has a maximum drain-source voltage of 200 volts and a continuous drain current of 9.4 amps. This MOSFET features a low on-state resistance of 1.8 ohms, which enables efficient power switching and minimal power dissipation. It also has a gate threshold voltage of 2 to 4 volts, allowing for easy and precise control of the switching operation.The IRF631 is housed in a TO-220 package, which provides excellent thermal performance and ease of mounting on a circuit board. It is suitable for a wide range of applications, including power supplies, motor control, and LED lighting.The operating temperature range of the IRF631 is from -55 to 175 degrees Celsius, making it suitable for use in a variety of environmental conditions. Additionally, it has a low gate charge of 59 nanocoulombs, which ensures fast switching speeds and reduced power losses during operation.
Key Features
- Power MOSFET
- Voltage rating of 200V
- Current rating of 9.7A
- Low on-state resistance
- Fast switching speed
- Logic level gate drive
- Enhanced high frequency performance
- Can be used in high power applications
Application
- Switching applications in power supplies
- Motor control
- LED lighting
- DC-DC converters
- Electronic ballasts
- Audio amplifiers
- Automotive applications
- Industrial control systems
- Power management circuits
- Battery charging circuits
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | No | Rohs Code | No |
| Part Life Cycle Code | Active | Reach Compliance Code | |
| Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 150 V | Drain Current-Max (ID) | 9 A |
| Drain-source On Resistance-Max | 0.4 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e0 | Moisture Sensitivity Level | NOT SPECIFIED |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Mode ! | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 36 A | Qualification Status ! | COMMERCIAL |
| Surface Mount ! | NO | Terminal Finish | TIN LEAD |
| Terminal Form ! | THROUGH-HOLE | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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