IRF7901D1PBF
This product is an N-channel Transistor designed for switching applications, featuring a 30V drain-to-source voltage and a maximum current of 6IRF7901D1PBF
This product is an N-channel Transistor designed for switching applications, featuring a 30V drain-to-source voltage and a maximum current of 6
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Manufacturer Part # : IRF7901D1PBF
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Package/Case: SOIC
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Part Status : OBSOLETE
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Brand: Infineon Technologies AG
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Product Categories : MOSFETs
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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IRF7901D1PBF DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The IRF7901D1PBF is a dual power MOSFET with high-speed body diode, designed for use in synchronous buck converters and motor control applications. It is part of the DirectFET family, which is known for its low thermal resistance and high power density.The IRF7901D1PBF features a a low on-state resistance (RDS(on)) of 5.5mΩ at Vgs of 10V, which results in lower conduction losses and improved efficiency. Its dual MOSFET design allows for higher current-carrying capacity and reduced parasitic inductance, making it suitable for high current applications.This device has a working voltage of 30V, allowing for usage in a wide range of voltage applications. It has a maximum continuous drain current of 100A, which makes it suitable for high-power applications. The IRF7901D1PBF also has a maximum junction temperature of 175°C, ensuring reliable operation even in high-temperature environments.
Key Features
- Power MOSFET with integrated Schottky diode
- Fast switching speed
- Low RDS(on) resistance
- Low gate charge
- Logic level gate drive
- High efficiency
Application
- DC-DC converters
- Point-of-load regulators
- Motor control circuits
- Power management systems
- Industrial automation
- Solar inverters
- Telecommunications equipment
- Consumer electronics
- Automotive systems
- Battery charging circuits
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
ECCN (US) | EAR99 | Part Status ! | Obsolete |
Automotive | No | PPAP | No |
Category | Power MOSFET | Configuration | Dual |
Channel Mode | Enhancement | Channel Type | N |
Number of Elements per Chip | 2 | Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±20 | Maximum Continuous Drain Current (A) | 6.2 |
Maximum Drain Source Resistance (MOhm) | [email protected]@Q 1|[email protected]@Q 2 | Typical Gate Charge @ Vgs (nC) | 7.6@5V@Q 1|15.5@5V@Q 2 |
Typical Input Capacitance @ Vds (pF) | 780@16V@Q 1|1810@16V@Q 2 | Maximum Power Dissipation (mW) | 2000 |
Typical Fall Time (ns) | 8@Q 1|5.2@Q 2 | Typical Rise Time (ns) | 13.8@Q 1|16.4@Q 2 |
Typical Turn-Off Delay Time (ns) | 14.7@Q 1|14.6@Q 2 | Typical Turn-On Delay Time (ns) | 7.2@Q 1|10.4@Q 2 |
Minimum Operating Temperature (°C) | -55 | Maximum Operating Temperature (°C) | 150 |
Mounting | Surface Mount | Package Height | 1.5(Max) |
Package Width | 4(Max) | Package Length | 5(Max) |
PCB changed | 8 | Standard Package Name | SO |
Supplier Package | SOIC | Pin Count ! | 8 |
Lead Shape | Gull-wing |
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