IRL630A

Effective Inventory3,291

TO-220 packaged N-channel MOSFET transistor capable of handling 200V and 9A

  • Manufacturer Part # : IRL630A

  • Package/Case: TO220-3

  • Part Status : Discontinued

  • Brand: Onsemi

  • Product Categories : Single FETs, MOSFETs

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Shipping & Payment

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Service & Packaging

Service & Packaging

About After Sales Service

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Initiate the application within 90 days from the shipment date.

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IRL630A DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for IRL630A or email to us: Email: [email protected], we will contact you in 12 hours.

Details

BVDSS = 200 VRDS(on) = 0.4ΩID = 9 AFEATURES♦ Logic-Level Gate Drive♦ Avalanche Rugged Technology♦ Rugged Gate Oxide Technology♦ Lower Input Capacitance♦ Improved Gate Charge♦ Extended Safe Operating Area♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V♦ Lower RDS(ON): 0.335Ω (Typ.)

Key Features

  • ♦ Logic-Level Gate Drive
  • ♦ Avalanche Rugged Technology
  • ♦ Rugged Gate Oxide Technology
  • ♦ Lower Input Capacitance
  • ♦ Improved Gate Charge
  • ♦ Extended Safe Operating Area
  • ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V
  • ♦ Lower RDS(ON): 0.335Ω (Typ.)

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 9 A Rds On - Drain-Source Resistance 400 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature ! + 150 C Pd - Power Dissipation 69 W
Channel Mode Enhancement Brand onsemi / Fairchild
Configuration Single Fall Time 9 ns
Forward Transconductance - Min 4.5 S Height 16.3 mm
Length 10.67 mm Product Type ! MOSFET
Rise Time ! 6 ns Factory Pack Quantity 50
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 30 ns
Typical Turn-On Delay Time 8 ns Width 4.7 mm
Part # Aliases IRL630A_NL Unit Weight 0.068784 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification IRL630A PDF Download

FAQs

What is IRL630A?

The IRL630A is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high power switching applications. It is commonly used in power supplies, motor control, and automotive systems due to its high current handling capability and low on-state resistance.

How Does IRL630A Work?

The IRL630A operates as a switch, controlling the flow of high current with minimal voltage drop across the device. When a sufficient gate voltage is applied, the MOSFET allows a large current to pass through from the source to the drain, effectively switching on the power circuit. It offers efficient and fast switching performance, essential for high power applications.

How Many Pins does IRL630A have and What are the Functions of the Pinout Configuration?

The IRL630A is typically available in a TO-220 package, which includes three pins:

  • GATE: The gate terminal is used to control the turn-on and turn-off of the MOSFET by applying the gate-source voltage.
  • DRAIN: The drain terminal is where the output current flows from the MOSFET to the load.
  • SOURCE: The source terminal is the reference point for the output current and completes the current path.

What are the Pros and Cons of IRL630A?

Pros:

  • High Current Handling: Capable of handling large currents, suitable for power switching applications.
  • Low On-State Resistance: Provides minimal voltage drop when conducting, leading to efficient power transmission.
  • Robustness: Designed to withstand high voltage and current stress in challenging environments.
  • Wide Application Range: Suitable for various high-power electronic systems including motor control and power supplies.

Cons:

  • Gate Drive Voltage: Requires a relatively high gate-source voltage to fully enhance the switching performance.
  • Heat Dissipation: May require additional heat sinking or thermal management due to high power dissipation.

Are There Any Equivalents/Alternatives to IRL630A for Recommendation?

  • The IRF630A from Infineon is a similar power MOSFET with comparable specifications.
  • Alternatives to the IRL630A include the FQP30N06L from Fairchild Semiconductor and the RFP30N06LE from ON Semiconductor.

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