IRLS3036PBF
N-CHANNEL Power MOSFET with a maximum current rating of 195 A and a voltage rating of 60 VIRLS3036PBF
N-CHANNEL Power MOSFET with a maximum current rating of 195 A and a voltage rating of 60 V
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Manufacturer Part # : IRLS3036PBF
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Package/Case: TO252-3
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Brand: Infineon Technologies
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Product Categories : Single FETs, MOSFETs
Quality Assurance
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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IRLS3036PBF DataSheet
Pricing (USD)
Quantity | Unit Price | Ext. Price |
---|---|---|
1 | $2.213 | $2.21 |
200 | $0.856 | $171.20 |
500 | $0.827 | $413.50 |
1000 | $0.812 | $812.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
BVDSS = 100 VRDS(on) = 0.22ΩID = 7.2 AFEATURES● Avalanche Rugged Technology● Rugged Gate Oxide Technology● Lower Input Capacitance● Improved Gate Charge● Extended Safe Operating Area● Lower Leakage Current : 10 μA (Max.) @ VDS = 100V● Lower RDS(ON) : 0.176Ω (Typ.)
![IRLS3036PBF IRLS3036PBF](/files/uploads/product/b/8aa7f28f-bdbb-4ef3-f016-08dbc6589f1e.webp)
Key Features
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current : 10 μA (Max.) @ VDS = 100V
- Lower RDS(ON) : 0.176Ω (Typ.)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category ! | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TO-252-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 270 A | Rds On - Drain-Source Resistance | 2.8 mOhms |
Vgs - Gate-Source Voltage | - 16 V, + 16 V | Qg - Gate Charge | 91 nC |
Pd - Power Dissipation | 380 W | Brand | Infineon Technologies |
Configuration | Single | Height | 2.3 mm |
Length | 6.5 mm | Product Type ! | MOSFET |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Width | 6.22 mm |
Part # Aliases | SP001552894 | Unit Weight | 0.011640 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IRLS3036PBF?
The IRLS3036PBF is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed by Infineon Technologies. It is specifically optimized for high-efficiency power management applications, such as DC-DC converters, motor control, and switching power supplies.
How Does IRLS3036PBF Work?
The IRLS3036PBF works by controlling the flow of electrical current between its source and drain terminals using an electric field. It is designed to handle high power levels with minimal conduction losses and fast switching speeds. The MOSFET's low on-resistance and high current-carrying capability make it ideal for power electronics applications.
How Many Pins does IRLS3036PBF have and What are the Functions of the Pinout Configuration?
The IRLS3036PBF is housed in a TO-263 package with 3 pins. The pinout configuration includes:
- GATE: This pin is used to apply the control voltage that turns the MOSFET on and off.
- DRAIN: The drain pin is where the output voltage is taken from and where the current flows out of the MOSFET.
- SOURCE: The source pin is where the current flows into the MOSFET and is the reference for the output voltage.
What are the Pros and Cons of IRLS3036PBF?
Pros:
- High Efficiency: Optimized for high-efficiency power management applications.
- Low On-Resistance: Minimizes conduction losses, ideal for high-current applications.
- Fast Switching Speed: Allows for rapid on/off control in switching applications.
- Compact Package: TO-263 package provides a good balance of power handling capability and thermal performance.
Cons:
- Drive Voltage: The gate drive voltage requirement may affect the compatibility with certain driver circuits.
- Heat Dissipation: High power dissipation may require additional thermal management considerations.
Are There Any Equivalents/Alternatives to IRLS3036PBF for Recommendation?
- The IRF1405PbF from Infineon is a similar power MOSFET with comparable characteristics.
- Alternatives to the IRLS3036PBF include the FDP8878 from Fairchild Semiconductor and the STP55NF06L from STMicroelectronics.
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