IXFH32N50Q
Power MOSFET Transistor, N-Channel, TO-247ADIXFH32N50Q
Power MOSFET Transistor, N-Channel, TO-247AD
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Manufacturer Part # : IXFH32N50Q
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Package/Case: TO-247-3
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Brand: Littelfuse
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Product Categories : Single FETs, MOSFETs
Quality Assurance
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Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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IXFH32N50Q DataSheet
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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The IXFH32N50Q Power MOSFET from the Q-Class series is a highly sought-after device in the realm of power electronics. Its reputation precedes it as a top choice for applications requiring efficient switching and reliability. With a low gate charge and superior ruggedness, this MOSFET is known for its exceptional performance in both hard switching and resonant mode operations. Its fast intrinsic diode further enhances its usability in various industrial settings
![](/files/uploads/product/b/fcdbc04bc5494110ba1272e0f3b38597.webp)
Key Features
- High speed switching
- Fault detection circuitry
- Low input capacitance
- Internal surge protection diodes
- Ruggedized construction
Application
- Flexible mounting options
- Low on-resistance
- Long lifespan
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Drain-Source Voltage (V) | 500 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.16 |
Continuous Drain Current @ 25 ℃ (A) | 32 | Gate Charge (nC) | 153 |
Input Capacitance, CISS (pF) | 3950 | Thermal resistance [junction-case] (K/W) | 0.35 |
Configuration | Single | Package Type | TO-247 |
Power Dissipation (W) | 357 | Maximum Reverse Recovery (ns) | 250 |
Sample Request | No |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is IXFH32N50Q?
The IXFH32N50Q is a high-performance, 500V, 32A, N-channel IGBT (Insulated Gate Bipolar Transistor) designed by IXYS. It is ideal for high-power applications such as motor drives, renewable energy systems, and industrial automation.
How Does IXFH32N50Q Work?
The IXFH32N50Q works by controlling high-power electrical signals using the combination of MOSFET and bipolar transistor structures. It provides high current and voltage handling capabilities while enabling efficient and fast switching for power control applications.
How Many Pins does IXFH32N50Q have and What are the Functions of the Pinout Configuration?
The IXFH32N50Q is housed in a TO-247 package. The pinout configuration includes:
- GATE: Gate control input for the IGBT.
- C (Collector): High-power current input/output.
- E (Emitter): High-power ground reference.
- V (Voltage Sense): Voltage sensing pin for feedback or protection.
What are the Pros and Cons of IXFH32N50Q?
Pros:
- High Voltage and Current Handling: Capable of handling high-power applications with its 500V and 32A ratings.
- Fast Switching: Enables efficient power control with fast switching characteristics.
- Reliable Performance: Provides stable and reliable performance in demanding industrial environments.
- TO-247 Package: Offers robust package for effective heat dissipation and electrical isolation.
Cons:
- Gate Drive Complexity: Requires careful attention to gate drive circuitry and protection to ensure proper operation.
- Heat Dissipation: May require thermal management considerations due to high power dissipation.
- Complexity for Low-Power Applications: Over-engineered for low-power applications, making it less cost-effective for such scenarios.
Are There Any Equivalents/Alternatives to IXFH32N50Q for Recommendation?
Alternatives to the IXFH32N50Q include the IRG7PH46U and IRGP4063D from Infineon, as well as the FGA60N65SMD from Fairchild Semiconductor.
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