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K4S280832K-UC75
The K4S280832K-UC75 is a memory chip, specifically a synchronous dynamic random-access memory (SDRAM) moduleK4S280832K-UC75
The K4S280832K-UC75 is a memory chip, specifically a synchronous dynamic random-access memory (SDRAM) module
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Service & Packaging
Service & Packaging
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K4S280832K-UC75 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The K4S280832K-UC75 is a synchronous dynamic random access memory (SDRAM) module produced by Samsung. It has a capacity of 256 megabytes and operates at a speed of 75 MHz. The module is organized as a 32Mx8CMOS Synchronous DRAM with a CAS latency of 2. It has a double data rate (DDR) interface and operates at a voltage of 3.3V. This memory module is designed for use in computer systems and other electronic devices requiring high-speed data storage and retrieval.The K4S280832K-UC75 is housed in a 54-pin plastic TSOP-II package, which helps to ensure reliable performance and compatibility with a wide range of devices. It also features a burst length of 1, 2, 4, 8, and a refresh interval of 8K/64ms.
Key Features
- 32Mx8 Bit DDR SDRAM
- 75ns Clock Cycle Time (CL=3)
- Very Low Power Consumption
- 4 Banks with Write Buffered Column Access
- Fully Synchronous Operation
- Fixed Burst Length of 4
- Single Differential Data Strobe
Application
- Embedded systems
- Computer peripherals
- Networking equipment
- Industrial applications
- Automotive electronics
- Telecommunications
- Consumer electronics
- Medical devices
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Obsolete |
| Reach Compliance Code | ECCN Code | EAR99 | |
| HTS Code ! | 8542.32.00.02 | Access Time-Max | 5.4 ns |
| Clock Frequency-Max (fCLK) | 133 MHz | I/O Type | COMMON |
| Interleaved Burst Length | 1,2,4,8 | JESD-30 Code | R-PDSO-G54 |
| JESD-609 Code | e3 | Memory Density | 134217728 bit |
| Memory IC Type | SYNCHRONOUS DRAM | Memory Width | 8 |
| Moisture Sensitivity Level | 3 | Number of Terminals | 54 |
| Number of Words | 16777216 words | Number of Words Code | 16000000 |
| Operating Temperature-Max | 70 °C | Operating Temperature-Min | |
| Organization | 16MX8 | Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY | Package Code | TSOP |
| Package Equivalence Code | TSOP54,.46,32 | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE, THIN PROFILE | Peak Reflow Temperature (Cel) | 260 |
| Power Supplies ! | 3.3 V | Qualification Status ! | Not Qualified |
| Refresh Cycles | 4096 | Sequential Burst Length | 1,2,4,8,FP |
| Standby Current-Max | 0.002 A | Supply Current-Max | 0.2 mA |
| Supply Voltage-Nom (Vsup) | 3.3 V | Surface Mount ! | YES |
| Technology | CMOS | Temperature Grade ! | COMMERCIAL |
| Terminal Finish | TIN | Terminal Form ! | GULL WING |
| Terminal Pitch ! | 0.8 mm | Terminal Position | DUAL |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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