K4S281632E-TC75

Name: K4S281632E-TC75
Rating: 4.5 (10 reviews)

High-speed DRAM for memory-intensive applications with low power consumption

3,550 Effective Inventory

K4S281632E-TC75

Effective Inventory3,550

High-speed DRAM for memory-intensive applications with low power consumption

Manufacturer Part # : K4S281632E-TC75
Brand: Samsung Semiconductor
Product Categories : Memory

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

About Shipping

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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K4S281632E-TC75 DataSheet

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Details

Introduction to K4S281632E-TC75

The K4S281632E-TC75 is a synchronous dynamic random-access memory (SDRAM) IC manufactured by Samsung. This IC is designed for high-speed data storage and retrieval in various electronic systems. With a capacity of 128M-bit, the K4S281632E-TC75 offers fast data access times and high bandwidth, making it suitable for use in applications requiring large memory and rapid data processing.

Specs and Features

Memory Type: Synchronous dynamic random-access memory (SDRAM) with 128M-bit capacity.
Data Rate: Offers high-speed data transfer rates for efficient memory operations.
Operating Voltage: Supports standard voltage levels for compatibility with various electronic systems.
Data Bus Width: Organized as 16M words x 4 bits or 8M words x 8 bits for flexible data handling.
Row Cycle Time: Provides fast row cycle time for quick activation of memory rows.
Package Type: Available in industry-standard TSOP (Thin Small-Outline Package) for space-efficient PCB layout.

Application and Uses

The K4S281632E-TC75 is ideal for applications requiring high-speed memory access:

Computer Systems: Integrated into PCs, laptops, and workstations for main memory and cache applications.
Networking Equipment: Used in routers, switches, and network appliances for data buffering and packet processing.
Telecommunication Systems: Applied in base stations and communication infrastructure for fast data handling and storage.
Graphics and Video Processing: Utilized in graphics cards and video processing units for quick frame buffering and data storage.

Equivalent Part

For similar functionalities, consider these alternatives to the K4S281632E-TC75:

MT48LC16M16A2: Synchronous DRAM IC with comparable capacity and data transfer rates for high-performance applications.
IS42S16100E: Synchronous DRAM IC offering high-speed data access and flexible data bus configurations for memory-intensive systems.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code	No	Part Life Cycle Code	Obsolete
Ihs Manufacturer	SAMSUNG SEMICONDUCTOR INC	Part Package Code	TSOP2
Package Description	TSOP2, TSOP54,.46,32	Pin Count !	54
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code !	8542.32.00.02	Access Mode !	FOUR BANK PAGE BURST
Access Time-Max	5.4 ns	Additional Feature !	AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)	133 MHz	I/O Type	COMMON
Interleaved Burst Length	1,2,4,8	JESD-30 Code	R-PDSO-G54
JESD-609 Code	e0	Length	22.22 mm
Memory Density	134217728 bit	Memory IC Type	SYNCHRONOUS DRAM
Memory Width	16	Number of Functions	1
Number of Ports !	1	Number of Terminals	54
Number of Words	8388608 words	Number of Words Code	8000000
Operating Mode !	SYNCHRONOUS	Operating Temperature-Max	70 °C
Organization	8MX16	Output Characteristics	3-STATE
Package Body Material	PLASTIC/EPOXY	Package Code	TSOP2
Package Equivalence Code	TSOP54,.46,32	Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE, THIN PROFILE	Peak Reflow Temperature (Cel)	240
Power Supplies !	3.3 V	Qualification Status !	Not Qualified
Refresh Cycles	4096	Seated Height-Max	1.2 mm
Self Refresh	YES	Sequential Burst Length	1,2,4,8
Standby Current-Max	0.002 A	Supply Current-Max	0.2 mA
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	3 V
Supply Voltage-Nom (Vsup)	3.3 V	Surface Mount !	YES
Technology	CMOS	Temperature Grade !	COMMERCIAL
Terminal Finish	Tin/Lead (Sn/Pb)	Terminal Form !	GULL WING
Terminal Pitch !	0.8 mm	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Width	10.16 mm