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KSA1156
low-power transistor
KSA1156
low-power transistor
Quality Assurance
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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KSA1156 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
KSA1156 is a PNP Bipolar Junction Transistor (BJT) that is commonly used in electronic circuit designs. It is often utilized in amplification applications due to its high gain and low noise characteristics. The transistor has a maximum collector current of 0.1A and a power dissipation of 0.4W, making it suitable for small signal amplification. The KSA1156 has a maximum collector-base voltage of -15V and a maximum emitter-base voltage of -5V, allowing for flexibility in circuit design. It has a transition frequency of 150MHz, which indicates its ability to amplify high-frequency signals effectively. This transistor is housed in a TO-92 package, which is a widely used form factor for small signal transistors. The compact size of the TO-92 package makes the KSA1156 easy to implement on circuit boards.
Key Features
- 1. High input impedance
- 2. Low noise figure
- 3. High gain
- 4. Wide bandwidth
- 5. Suitable for use in RF and microwave applications
- 6. Compact size and easy to integrate into circuit designs
Application
- This product is general usage and suitable for many different applications.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Active | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Collector Current-Max (IC) | 0.5 A |
| Collector-Emitter Voltage-Max | 400 V | Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 30 | JEDEC-95 Code | TO-126 |
| JESD-30 Code | R-PSFM-T3 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT | Polarity/Channel Type | PNP |
| Power Dissipation Ambient-Max | 1 W | Power Dissipation-Max (Abs) | 10 W |
| Surface Mount ! | NO | Terminal Form ! | THROUGH-HOLE |
| Terminal Position | SINGLE | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | Turn-off Time-Max (toff) | 5000 ns |
| Turn-on Time-Max (ton) | 1000 ns | VCEsat-Max | 1 V |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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