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KSP10TA
Si NPN transistor epitaxial configuration for bipolar transistors
KSP10TA
Si NPN transistor epitaxial configuration for bipolar transistors
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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Maintain the goods in their original condition as received.
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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KSP10TA DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $0.102 | $0.10 |
| 200 | $0.040 | $8.00 |
| 500 | $0.038 | $19.00 |
| 1000 | $0.037 | $37.00 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
KSP10TA is an NPN RF transistor with a maximum voltage rating of 25V and a frequency capability of 650MHz. This transistor is designed for use in high frequency applications where low power dissipation is required, with a maximum power rating of 350mW. The component is housed in a TO-92-3 through-hole package, making it easy to integrate into circuit boards for various RF applications. The KSP10TA transistor offers high performance and reliability, making it suitable for use in amplifiers, oscillators, and various other RF circuits where small signal amplification is needed. Its NPN configuration allows for easy pairing with other complementary transistors in push-pull configurations for power amplification purposes. This transistor is characterized by its low noise figure, high current and voltage capabilities, and efficient power handling, making it a versatile component for RF design engineers. Its compact size and through-hole package make it easy to handle and solder onto circuit boards.
Key Features
- Temperature range: -50°C to 1300°C
- Thermocouple types: K, J, T, S, R, B, N
- Accuracy: ±0.1% of reading ±0.7°C
- Resolution: 0.1°C or 1°C
- Digital display with backlight
- Data hold and max/min function
Application
- Suitable for various tasks.
- An essential for any project.
- Works well in different settings.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Manufacturer | onsemi | Product Category ! | Bipolar Transistors - BJT |
| RoHS | Details | Mounting Style | Through Hole |
| Package / Case | TO-92-3 Kinked Lead | Transistor Polarity | NPN |
| Configuration | Single | Collector- Emitter Voltage VCEO Max | 25 V |
| Collector- Base Voltage VCBO | 30 V | Emitter- Base Voltage VEBO | 3 V |
| Collector-Emitter Saturation Voltage | 500 mV | Maximum DC Collector Current | - |
| Pd - Power Dissipation | 350 mW | Gain Bandwidth Product fT | 650 MHz |
| Minimum Operating Temperature | - | Maximum Operating Temperature ! | + 150 C |
| Series | KSP10 | Brand | onsemi / Fairchild |
| DC Collector/Base Gain hfe Min | 60 | Height | 4.7 mm |
| Length | 4.7 mm | Product Type ! | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 2000 | Subcategory | Transistors |
| Technology | Si | Width | 3.93 mm |
| Part # Aliases | KSP10TA_NL | Unit Weight | 0.008466 oz |
| Package | Bulk | Product Status | Active |
| Transistor Type | NPN | Voltage - Collector Emitter Breakdown (Max) | 25V |
| Frequency - Transition | 650MHz | Power - Max | 350mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V | Operating Temperature ! | 150°C (TJ) |
| Mounting Type | Through Hole | Supplier Device Package | TO-92-3 |
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