M29W160EB70N6E

STMicroelectronics M29W160EB70N6E: Parallel 16Mbit Flash Memory
3,395 Effective Inventory

M29W160EB70N6E

Effective Inventory3,395

STMicroelectronics M29W160EB70N6E: Parallel 16Mbit Flash Memory

Quality Assurance

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

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About Payment

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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M29W160EB70N6E DataSheet
no-price

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for M29W160EB70N6E or email to us: Email: [email protected], we will contact you in 12 hours.

Details

Additionally, the M29W160EB70N6E chip boasts a high-speed programming algorithm, enabling swift programming with a typical erase time of just 1.5 seconds per sector. This means that critical data can be written, erased, and modified quickly and efficiently, making it ideal for time-sensitive applications. Its software protection mechanism adds an extra layer of security, ensuring that important data is safeguarded against accidental programming

M29W160EB70N6E

Key Features

  • SUPPLY VOLTAGE
  • – VCC = 2.7V to 3.6V for Program, Erase and Read
  • ACCESS TIMES: 70, 90ns
  • PROGRAMMING TIME
  • – 10µs per Byte/Word typical
  • 35 MEMORY BLOCKS
  • – 1 Boot Block (Top or Bottom Location)
  • – 2 Parameter and 32 Main Blocks
  • PROGRAM/ERASE CONTROLLER
  • – Embedded Byte/Word Program algorithms
  • ERASE SUSPEND and RESUME MODES
  • – Read and Program another Block during Erase Suspend
  • UNLOCK BYPASS PROGRAM COMMAND
  • – Faster Production/Batch Programming
  • TEMPORARY BLOCK UNPROTECTION MODE
  • COMMON FLASH INTERFACE
  • – 64 bit Security Code
  • LOW POWER CONSUMPTION
  • – Standby and Automatic Standby
  • 100,000 PROGRAM/ERASE CYCLES per BLOCK
  • ELECTRONIC SIGNATURE
  • – Manufacturer Code: 0020h
  • – Top Device Code M29W160ET: 22C4h
  • – Bottom Device Code M29W160EB: 2249h
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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! NOR Flash RoHS Details
Mounting Style SMD/SMT Package / Case TSOP-48
Series M29W Memory Size ! 16 Mbit
Supply Voltage - Min 2.7 V Supply Voltage - Max 3.6 V
Active Read Current - Max 10 mA Interface Type Parallel
Organization 2 M x 8/1 M x 16 Data Bus Width 8 bit/16 bit
Timing Type Asynchronous Minimum Operating Temperature - 40 C
Maximum Operating Temperature ! + 85 C Architecture Block Erase
Brand STMicroelectronics Memory Type ! NOR
Moisture Sensitive Yes Product Type ! NOR Flash
Speed 70 ns Standard Common Flash Interface (CFI)
Factory Pack Quantity 96 Subcategory Memory & Data Storage

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification M29W160EB70N6E PDF Download

FAQs

What is M29W160EB70N6E?

The M29W160EB70N6E is a 16-megabit (2M x 8 or 1M x 16) non-volatile Flash memory chip manufactured by STMicroelectronics. It is commonly used in various embedded systems, consumer electronics, and automotive applications for data storage, code execution, and firmware updates.

How Does M29W160EB70N6E Work?

The M29W160EB70N6E works by storing data in a non-volatile manner, meaning that the data is retained even when the power is turned off. It utilizes Flash memory technology to enable read, write, and erase operations, making it suitable for storing program code, configuration parameters, and other critical data in electronic systems.

How Many Pins does M29W160EB70N6E have and What are the Functions of the Pinout Configuration?

The M29W160EB70N6E is housed in a 48-ball Fortified BGA (Ball Grid Array) package. The pinout configuration includes:

  • Addresses (Ax0 - Ax18): Address input pins for selecting memory locations.
  • CE#: Chip Enable input for activating the memory chip.
  • CE# or RESET#: Additional Chip Enable or Reset input pin.
  • OE#: Output Enable input for enabling data output.
  • WE#/BYTE#/ACC: Write Enable or Byte/Access Mode control input.
  • DATA (DQ0 - DQ15): Data input/output pins.
  • VCC: Power supply pin.
  • GND: Ground pin.
  • RY/BY#: Ready/Busy output pin indicating the status of the memory operation.

What are the Pros and Cons of M29W160EB70N6E?

Pros:

  • High Capacity: Offers 16 megabits of non-volatile storage space for program and data storage.
  • Non-Volatile Memory: Retains stored data even when power is removed, ensuring data integrity.
  • High-Speed Read and Write Operations: Enables fast access to stored data and efficient program execution.
  • Compact Package: The 48-ball BGA package is space-efficient, suitable for compact designs.

Cons:

  • Complex Interface: Requires careful handling of control signals and voltage levels for proper operation.
  • Cost: The high capacity and non-volatile nature of the memory may result in a higher cost compared to volatile memory alternatives.
  • Board Layout: The BGA package may require specific layout considerations and manufacturing processes.

Are There Any Equivalents/Alternatives to M29W160EB70N6E for Recommendation?

  • The W25Q128JV from Winbond is a similar 16-megabit Flash memory chip with additional features.
  • Alternatives to the M29W160EB70N6E include the S29GL128P from Cypress and the AM29LV160 from AMD.

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