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M58BW016DB80T3F
With its PQFP80 plastic package and QFP-80 design, the M58BW016DB80T3F is a reliable choice for demanding memory storage applications
M58BW016DB80T3F
With its PQFP80 plastic package and QFP-80 design, the M58BW016DB80T3F is a reliable choice for demanding memory storage applications
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Manufacturer Part # : M58BW016DB80T3F
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Package/Case: QFP-80
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Brand: STMicroelectronics
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Product Categories : Microcontrollers
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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M58BW016DB80T3F DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16 Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the input and output buffers. Optionally a 12 V VPP supply can be used to provide fast program and erase for a limited time and number of program/erase cycles.The devices support Asynchronous (Latch Controlled and Page Read) and Synchronous Bus operations. The Synchronous Burst Read interface allows a high data transfer rate controlled by the Burst Clock, K, signal. It is capable of bursting fixed or unlimited lengths of data. The burst type, latency and length can be configured and can be easily adapted to a large variety of system clock frequencies and microprocessors. All writes are asynchronous. On power-up the memory defaults to Read mode with an Asynchronous Bus.The devices have a boot block architecture with an array of 8 parameter blocks of 64 Kb each and 31 main blocks of 512 Kb each. In the M58BW016DT and M58BW016FT the parameter blocks are located at the top of the address space whereas in the M58BW016DB and M58BW016FB, they are located at the bottom.Program and Erase commands are written to the command interface of the memory. An on chip Program/Erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified in the Status Register. The command set required to control the memory is consistent with JEDEC standards.Features■ Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)■ High performance – Access times: 70, 80 ns – 56 MHz effective zero wait-state Burst Read – Synchronous Burst Read – Asynchronous Page Read■ Hardware block protection – WP pin for Write Protect of the 4 outermost parameter blocks and all main blocks – RP pin for Write Protect of all blocks■ Optimized for FDI drivers – Fast Program / Erase Suspend latency time <6 µs – Common Flash interface■ Memory blocks – 8 parameters blocks (top or bottom) – 31 main blocks■ Low power consumption – 5 µA typical Deep Power-down – 60 µA typical standby for M58BW016DT/B 150 µA typical standby for M58BW016FT/B – Automatic standby after Asynchronous Read■ Electronic signature – Manufacturer code: 20h – Top device code: 8836h – Bottom device code: 8835h■ ECOPACK® packages available
Key Features
- Supply voltage
- – VDD = 2.7 V to 3.6 V for Program, Erase and Read
- – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers
- – VPP = 12 V for Fast Program (optional)
- High performance
- – Access times: 70, 80 ns
- – 56 MHz effective zero wait-state Burst Read
- – Synchronous Burst Read
- – Asynchronous Page Read
- Hardware block protection
- – WP pin for Write Protect of the 4 outermost
- parameter blocks and all main blocks
- – RP pin for Write Protect of all blocks
- Optimized for FDI drivers
- – Fast Program / Erase Suspend latency time <6 µs
- – Common Flash interface
- Memory blocks
- – 8 parameters blocks (top or bottom)
- – 31 main blocks
- Low power consumption
- – 5 µA typical Deep Power-down
- – 60 µA typical standby for M58BW016DT/B
- 150 µA typical standby for M58BW016FT/B
- – Automatic standby after Asynchronous Read
- Electronic signature
- – Manufacturer code: 20h
- – Top device code: 8836h
- – Bottom device code: 8835h
- ECOPACK® packages available
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Part Life Cycle Code | Obsolete | Part Package Code | QFP |
| Pin Count ! | 80 | Reach Compliance Code | |
| ECCN Code | EAR99 | HTS Code ! | 8542.32.00.51 |
| Access Time-Max | 80 ns | Additional Feature ! | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK |
| Boot Block | BOTTOM | JESD-30 Code | R-PQFP-G80 |
| JESD-609 Code | e0 | Length | 20 mm |
| Memory Density | 16777216 bit | Memory IC Type | FLASH |
| Memory Width | 32 | Number of Functions | 1 |
| Number of Terminals | 80 | Number of Words | 524288 words |
| Number of Words Code | 512000 | Operating Mode ! | ASYNCHRONOUS |
| Operating Temperature-Max | 125 °C | Operating Temperature-Min | -40 °C |
| Organization | 512KX32 | Package Body Material | PLASTIC/EPOXY |
| Package Code | QFP | Package Shape | RECTANGULAR |
| Package Style | FLATPACK | Parallel/Serial | PARALLEL |
| Programming Voltage ! | 3 V | Qualification Status ! | Not Qualified |
| Seated Height-Max | 3.4 mm | Supply Voltage-Max (Vsup) | 3.6 V |
| Supply Voltage-Min (Vsup) | 2.7 V | Supply Voltage-Nom (Vsup) | 3 V |
| Surface Mount ! | YES | Technology | CMOS |
| Temperature Grade ! | AUTOMOTIVE | Terminal Finish | Tin/Lead (Sn85Pb15) |
| Terminal Form ! | GULL WING | Terminal Pitch ! | 0.8 mm |
| Terminal Position | QUAD | Type | NOR TYPE |
| Width | 14 mm |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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