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MD2103DFP
Introducing the MD2103DFP: a high-performance NPN TO-220FP Bipolar Transistor, engineered for 700V, 38W, with 6.5@3A and 5V 6A specifications
MD2103DFP
Introducing the MD2103DFP: a high-performance NPN TO-220FP Bipolar Transistor, engineered for 700V, 38W, with 6.5@3A and 5V 6A specifications
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Manufacturer Part # : MD2103DFP
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Package/Case: TO-220FP-3
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Brand: STMicroelectronics
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Product Categories : Single Bipolar Transistors
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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MD2103DFP DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
MD2103DFP is a Bipolar Junction Transistor (BJT) that falls under the NPN type with a maximum voltage rating of 700V, current rating of 6A, and power dissipation capacity of 38W. This transistor comes in a Through Hole TO-220FP package, which is a popular design for easy mounting and heat dissipation. The MD2103DFP transistor is commonly used in power applications due to its high voltage and current ratings, making it suitable for switching and amplification tasks that require handling significant power levels. Its TO-220FP package allows for convenient installation on circuit boards or heat sinks, ensuring efficient cooling and reliable operation. With a maximum voltage of 700V, the MD2103DFP can handle a wide range of voltage levels, making it versatile in various electronic applications. The 6A current rating enables this transistor to manage substantial current flows, which is crucial in power circuits where high current is involved.
Key Features
- High efficiency P-channel MOSFET
- Low on-resistance
- Logic-level gate drive
- Over-temperature protection
- Under-voltage lockout
- Over-current protection
Application
- Communication systems
- Navigation systems
- Automotive electronics
- Medical devices
- Industrial control systems
- Signal processing
- Robotics
- Power electronics
- Aerospace applications
- Consumer electronics
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Obsolete |
| Part Package Code | TO-220AB | Pin Count ! | 3 |
| Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
| Case Connection | ISOLATED | Collector Current-Max (IC) | 6 A |
| Collector-Emitter Voltage-Max | 700 V | Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| DC Current Gain-Min (hFE) | 6.5 | JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Polarity/Channel Type | NPN | Power Dissipation-Max (Abs) | 38 W |
| Qualification Status ! | Not Qualified | Surface Mount ! | NO |
| Terminal Finish | MATTE TIN | Terminal Form ! | THROUGH-HOLE |
| Terminal Position | SINGLE | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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