MDF11N60BTH

Name: MDF11N60BTH
Rating: 4.5 (10 reviews)

Fresh, unused, unopened

7,702 Effective Inventory

MDF11N60BTH

Effective Inventory7,702

Fresh, unused, unopened

Manufacturer Part # : MDF11N60BTH
Package/Case: TO-220F
Part Status : ACTIVE
Brand: MagnaChip Semiconductor
Product Categories : Single FETs, MOSFETs
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We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

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About Shipping

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Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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MDF11N60BTH DataSheet

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

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Please submit RFQ for MDF11N60BTH or email to us: Email: [email protected], we will contact you in 12 hours.

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Details

The MDF11N60BTH is a MOSFET transistor manufactured by STMicroelectronics. It is part of the MDmesh Power MOSFET family and specifically designed for use in high-power applications. This particular transistor has a drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 11A. It features a very low on-resistance of 0.33 ohms, which allows for efficient power management and reduced power dissipation.The MDF11N60BTH is housed in a TO-220 package, which is a popular choice for high-power devices due to its ability to dissipate heat effectively. This package also makes it easy to mount the transistor onto a heat sink for further thermal management.Additionally, the MDF11N60BTH has a gate threshold voltage of 3V, making it compatible with a wide range of gate drivers and control circuits. It also has a low gate charge, which enables fast switching speeds and reduces switching losses.

Key Features

11A continuous drain current
600V breakdown voltage
Low gate charge
Low on-resistance
Fast switching speed
Integrated high-speed body diode
TO-220 package
High efficiency power conversion
Low electromagnetic interference
Excellent thermal performance

Application

Power supplies
Industrial motor control
Switch mode power supplies
PFC boost circuits
Lighting control
Inverters
Electric vehicles
Renewable energy systems
UPS systems
Power factor correction

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

ECCN (US)	EAR99	Part Status !	Unconfirmed
HTS	8541.29.00.95	Automotive
PPAP		Category	Power MOSFET
Configuration	Single	Channel Mode	Enhancement
Channel Type	N	Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	600	Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	4	Maximum Continuous Drain Current (A)	11
Maximum Gate Source Leakage Current (nA)	100	Maximum IDSS (uA)	1
Maximum Drain Source Resistance (MOhm)	550@10V	Typical Gate Charge @ Vgs (nC)	33.2@10V
Typical Gate Charge @ 10V (nC)	33.2	Typical Input Capacitance @ Vds (pF)	1697@25V
Maximum Power Dissipation (mW)	49000	Typical Fall Time (ns)	55
Typical Rise Time (ns)	46	Typical Turn-Off Delay Time (ns)	171
Typical Turn-On Delay Time (ns)	22	Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150	Packaging !	Tube
Mounting	Through Hole	Package Height	16.13(Max)
Package Width	4.93(Max)	Package Length	10.71(Max)
PCB changed	3	Tab	Tab
Standard Package Name	TO-220	Supplier Package	TO-220F
Pin Count !	3	Lead Shape	Through Hole

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MDF11N60BTH

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