MJE13007A

Effective Inventory4,726

NPN High Voltage Fast Switching Bipolar Transistors

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Shipping & Payment

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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MJE13007A DataSheet

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Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for MJE13007A or email to us: Email: [email protected], we will contact you in 12 hours.

Details

The MJE13007A is a high voltage NPN silicon power transistor that is commonly used in high-speed switching applications. It is designed for use in high-voltage and high-speed power switching circuits, making it suitable for applications such as switching regulators, motor control, and other power electronics.This transistor has a maximum collector-emitter voltage of 400V and a maximum collector current of 8A, making it capable of handling high power levels. It has a low saturation voltage, which helps in reducing power loss and improving efficiency in switching applications. The MJE13007A also has a high current-gain bandwidth product, making it suitable for high-frequency applications.The transistor is housed in a TO-220 package, which provides good thermal conduction and ensures efficient heat dissipation. It has a maximum operating temperature of 150°C, allowing it to be used in a wide range of operating conditions.

Key Features

  • High voltage capability (700V)
  • High switching speed
  • Low spread of dynamic parameters
  • Tight hFE hFE3 groups
  • Extremely high thermal conductivity
  • Guaranteed avalanche energy specification
  • Good stability and high thermal resistance
  • Compliant with RoHS requirements

Application

  • Switching power supplies
  • High frequency inverters
  • Electronic ballasts
  • Motor control applications
  • Fluorescent lamp drivers
  • Audio amplifiers
  • General purpose power amplifiers

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category ! Bipolar Transistors - BJT RoHS Details
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 400 V Collector- Base Voltage VCBO 850 V
Emitter- Base Voltage VEBO 9 V Maximum DC Collector Current 8 A
Pd - Power Dissipation 80 W Gain Bandwidth Product fT 4 MHz
Minimum Operating Temperature - 65 C Maximum Operating Temperature ! + 150 C
Series MJE13007 Brand STMicroelectronics
Continuous Collector Current 8 A DC Collector/Base Gain hfe Min 6
DC Current Gain hFE Max 30 Height 9.15 mm
Length 10.4 mm Product Type ! BJTs - Bipolar Transistors
Factory Pack Quantity 50 Subcategory Transistors
Technology Si Width 4.6 mm
Unit Weight 0.211644 oz

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification MJE13007A PDF Download

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