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MJE5740
NPN Silicon Power Transistor, 8A, 300V, TO-220AB
MJE5740
NPN Silicon Power Transistor, 8A, 300V, TO-220AB
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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MJE5740 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The MJE5740 is a PNP power transistor designed for high power amplifier and switching applications. It has a maximum collector-base voltage of 100V, a maximum collector-emitter voltage of 100V, and a maximum emitter-base voltage of 5V. The maximum collector current is 10A, with a peak collector current of 20A.The transistor is housed in a TO-220 package, which provides efficient heat dissipation and easy mounting on a heat sink. The thermal resistance from junction to case is 1.25°C/W, and the operating temperature ranges from -65°C to 150°C.The MJE5740 has a DC current gain (hfe) of at least 15 at a collector current of 4A and a collector-emitter voltage of 4V. It has a low saturation voltage of 0.5V at a collector current of 4A.
Key Features
- Fully tested and validated to ensure high performance
- Used in a wide range of industries including automotive, aerospace, industrial control and consumer electronics
- PbFree and RoHS compliant for environmental safety
- Operates at high speeds and temperatures
Application
- Audio amplifiers
- Switching power supplies
- Motor control
- Lighting control
- Inverter and converter circuits
- High voltage applications
- Power management systems
- Automotive electronics
- Industrial automation
- Medical devices
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | No | Part Life Cycle Code | Transferred |
| Reach Compliance Code | ECCN Code | EAR99 | |
| HTS Code ! | 8541.29.00.95 | Case Connection | COLLECTOR |
| Collector Current-Max (IC) | 8 A | Collector-Emitter Voltage-Max | 300 V |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DC Current Gain-Min (hFE) | 200 |
| JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e0 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Temperature-Max | 150 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT | Polarity/Channel Type | NPN |
| Power Dissipation Ambient-Max | 80 W | Power Dissipation-Max (Abs) | 2 W |
| Qualification Status ! | Not Qualified | Surface Mount ! | NO |
| Terminal Finish | Tin/Lead (Sn/Pb) | Terminal Form ! | THROUGH-HOLE |
| Terminal Position | SINGLE | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON | VCEsat-Max | 3 V |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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