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MPSW56
TO-226 PNP silicon small signal transistor MPSW56, 80V, 1000mA
MPSW56
TO-226 PNP silicon small signal transistor MPSW56, 80V, 1000mA
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Shipping & Payment
Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
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MPSW56 DataSheet
Pricing (USD)
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | $0.373 | $0.37 |
| 200 | $0.145 | $29.00 |
| 500 | $0.140 | $70.00 |
| 1500 | $0.137 | $205.50 |
These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.
Details
The MPSW56 is a versatile PNP Darlington transistor that is well-suited for a wide range of amplification and switching applications. With its high current gain of 1000 to 10000, this transistor excels at efficiently amplifying weak signals, making it an ideal choice for use in audio amplifiers, signal amplification circuits, and motor control applications. Its low collector-emitter saturation voltage of 1V also ensures quick switching on and off while minimizing power consumption, making it a great fit for low-power switching applications where high efficiency is essential. Additionally, the MPSW56's maximum collector current of 100mA and maximum collector-base voltage of -100V make it suitable for low-power applications
Key Features
- This product has an extended operating temperature range.
- It is suitable for use in industrial applications.
- Warranty and support are available from the manufacturer.
- Efficiency levels are typically high.
Application
- Microwave transmission systems
- RF signal detection circuits
- Electronic component testing
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | Yes | Part Life Cycle Code | Active |
| Reach Compliance Code | Collector Current-Max (IC) | 1 A | |
| Collector-Emitter Voltage-Max | 80 V | Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 50 | JEDEC-95 Code | TO-226 |
| JESD-30 Code | O-PBCY-W3 | JESD-609 Code | e1 |
| Moisture Sensitivity Level | NOT SPECIFIED | Number of Elements | 1 |
| Number of Terminals | 3 | Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND | Package Style | CYLINDRICAL |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | PNP |
| Qualification Status ! | COMMERCIAL | Surface Mount ! | NO |
| Terminal Finish | TIN SILVER COPPER | Terminal Form ! | WIRE |
| Terminal Position | BOTTOM | Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 50 MHz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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