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MRF377H
Product MRF377H falls under the classification of RF MOSFET transistorsMRF377H
Product MRF377H falls under the classification of RF MOSFET transistors
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Manufacturer Part # : MRF377H
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Package/Case: SMD
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Brand: FREESCALE
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Product Categories : RF FETs, MOSFETs
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Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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MRF377H DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
470 - 860 MHz, 45 W AVG., 32 V LATERAL N-CHANNEL RF POWER MOSFETDesigned for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 32 volt digital television transmitter equipment.• Typical Broadband DVBT OFDM Performance @ 470-860 MHz, 32 Volts, IDQ = 2000 mA, 8K Mode, 64 QAM Output Power — 45 Watts Avg. Power Gain ≥ 16.7 dB Drain Efficiency ≥ 21% ACPR ≤ -58 dBc• Typical Broadband ATSC 8VSB Performance @ 470-860 MHz, 32 Volts, IDQ = 2000 mA Output Power — 80 Watts Avg. Power Gain ≥ 16.5 dB Drain Efficiency ≥ 27.5% IMD ≥ -31.3 dBc• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts CW Output PowerFeatures• Characterized with Series Equivalent Large-Signal Impedance Parameters• Internally Matched for Ease of Use• Device Designed for Push-Pull Operation Only• Integrated ESD Protection• Excellent Thermal Stability• Lower Thermal Resistance Package• Low Gold Plating Thickness on Leads, 40μ″ Nominal.• RoHS Compliant• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Key Features
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Internally Matched for Ease of Use
- Device Designed for Push-Pull Operation Only
- Integrated ESD Protection
- Excellent Thermal Stability
- Lower Thermal Resistance Package
- Low Gold Plating Thickness on Leads, 40μ″ Nominal.
- RoHS Compliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
- R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Manufacturer | NXP Semiconductors | Product Category ! | RF FETs |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is MRF377H?
The MRF377H is a high-power NPN silicon RF power transistor designed for high-frequency applications. It is commonly used in RF power amplifiers for industrial, scientific, and medical (ISM) applications, as well as in radio and television broadcasting.
How Does MRF377H Work?
The MRF377H works by amplifying radio frequency signals with high power and efficiency. It is designed to handle high input power levels and operate at high frequencies, making it suitable for applications requiring high-power RF amplification.
How Many Pins does MRF377H have and What are the Functions of the Pinout Configuration?
The MRF377H is typically housed in a 4-lead flange mount package. The pinout configuration includes:
- Emitter: Emitter terminal for the transistor.
- Base: Base terminal for the transistor.
- Collector: Collector terminal for the transistor.
- Mounting: Mounting terminal for mechanical stability and heat dissipation.
What are the Pros and Cons of MRF377H?
Pros:
- High Power: Capable of handling high power levels in RF amplification applications.
- Efficiency: Provides high RF power output with good efficiency.
- Reliability: Designed for reliable operation in high-power RF systems.
- Wide Frequency Range: Operates over a wide frequency range, suitable for various RF applications.
Cons:
- Complex Matching: Requires precise matching and tuning for optimal performance.
- Heat Dissipation: May require additional thermal management due to high power levels.
- Specialized Applications: Designed for specific high-power RF amplification applications, may not be suitable for low-power or general-purpose use.
Are There Any Equivalents/Alternatives to MRF377H for Recommendation?
Alternatives to the MRF377H include the BLF278 from NXP Semiconductors and the MRFE6VP61K25H from Freescale Semiconductor (now part of NXP).
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