MRF464
RF Transistor Bipolar Transistors MRF464MRF464
RF Transistor Bipolar Transistors MRF464
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Manufacturer Part # : MRF464
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Package/Case: SOT-123
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Brand: Advanced Semiconductor, Inc.
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Product Categories : Bipolar RF Transistors
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RoHS:
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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MRF464 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The MRF464 is a high-power NPN silicon microwave transistor designed for broadband RF and microwave applications. It is commonly used in RF power amplifiers for frequencies up to 2000 MHz. The transistor has a maximum power dissipation of 150 watts and a collector-base voltage of 65 volts. The MRF464 has a typical gain of 7 dB and a minimum noise figure of 8 dB. It is capable of delivering high output power with a maximum power gain of 14.5 dB.The MRF464 is housed in a metal flange package and features gold-plated leads for improved thermal conductivity and RF performance. It is designed to operate in Class AB operation for efficiency and linearity in high-power applications.This transistor is well-suited for use in industrial, scientific, and medical (ISM) applications, as well as in RF and microwave communication systems. It offers high reliability and performance, making it a popular choice among RF design engineers seeking to maximize power output and efficiency in their designs.
Key Features
- High power gain up to 23 dB
- Excellent thermal stability
- Designed for ultra-high power RF power amplifiers
- Operates at frequencies up to 500 MHz
- Capable of handling VSWR mismatches of up to 20:1
- Can operate in class AB biasing configurations
Application
- Amplifier circuits
- RF power amplifiers
- Transmitter circuits
- Radar systems
- UHF and VHF radio systems
- Communications equipment
- Industrial heating applications
- Medical equipment
- Radio frequency applications
- Linear amplifier circuits
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Advanced Semiconductor, Inc. | Product Category ! | RF Bipolar Transistors |
RoHS | Details | Transistor Type | Bipolar Power |
Technology | Si | Transistor Polarity | NPN |
Operating Frequency ! | 30 MHz | DC Collector/Base Gain hfe Min | 10 |
Collector- Emitter Voltage VCEO Max | 35 V | Emitter- Base Voltage VEBO | 2.5 V |
Continuous Collector Current | 10 A | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature ! | + 200 C | Mounting Style | Screw Mount |
Package / Case | SOT-123 | Brand | Advanced Semiconductor, Inc. |
Pd - Power Dissipation | 250 W | Product Type ! | RF Bipolar Transistors |
Factory Pack Quantity | 20 | Subcategory | Transistors |
Type | RF Bipolar Power |
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