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MRF8372
Transistors for RF Bipolar ApplicationsMRF8372
Transistors for RF Bipolar Applications
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All Parts Extended Quality Guarantee
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MRF8372 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The MRF8372 transistor is a versatile component engineered for high-power RF amplifier applications, boasting a frequency range of up to 900 MHz. Its design caters to a multitude of communication systems, from mobile to aerospace, delivering reliable performance at every turn. Crafted using Motorola's distinguished MOS technology, this transistor guarantees top-tier quality and efficiency. With a maximum Vcbo of 70 volts and an Ic of 4 amperes, the MRF8372 is well-equipped to tackle high-power RF signals with ease. Housed in a TO-220AB package, it excels in heat dissipation, ensuring optimal power management for seamless operation. Its impressive gain and minimal distortion render it ideal for linear amplifier designs, enhancing overall system performance. Trust the MRF8372 to deliver robust functionality and consistent results in even the most demanding of environments
Key Features
- MRF8372 is a silicon NPN bipolar transistor with a power gain of 12 dB.
- It offers good noise figure and intermodulation distortion performance.
- The device is suitable for radio frequency power amplifiers up to 28 V.
- The transistor has a compact TO-272 package design.
Application
- Efficient RF heating
- Custom industrial equipment
- Precise plasma control
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | RF Bipolar Transistors | RoHS | Details |
| Technology | Si | Brand | Microchip Technology |
| Product Type ! | RF Bipolar Transistors | Factory Pack Quantity | 1 |
| Subcategory | Transistors |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is MRF8372?
The MRF8372 is a high power NPN silicon bipolar transistor designed for RF power amplifier applications in the UHF frequency band. It is commonly used in industrial, scientific, and medical (ISM) applications, as well as in broadcast and aerospace systems.
How Does MRF8372 Work?
The MRF8372 works by amplifying RF signals at UHF frequencies with high power efficiency and linearity. Its NPN bipolar junction transistor structure allows for high gain and power output, making it suitable for high-power RF applications.
How Many Pins does MRF8372 have and What are the Functions of the Pinout Configuration?
The MRF8372 is housed in a bolt-down ceramic package. The pinout configuration includes:
- Emitter: Emitter terminal for the transistor.
- Base: Base terminal for controlling the transistor's amplification.
- Collector: Collector terminal for the transistor.
- Mounting Pad: Provides a thermal connection for heat dissipation.
What are the Pros and Cons of MRF8372?
Pros:
- High Power Amplification: Capable of amplifying high-power RF signals in the UHF band.
- Efficiency: Offers high power efficiency and linearity for RF amplification.
- Durable Package: The bolt-down ceramic package ensures robust thermal and mechanical performance.
- Wide Application Range: Suitable for diverse RF power amplifier applications.
Cons:
- Specialized Use: Designed specifically for UHF RF power amplification, may not be suitable for lower frequency bands.
- Heat Dissipation: Requires careful thermal management due to high power handling capability.
Are There Any Equivalents/Alternatives to MRF8372 for Recommendation?
Alternative high power UHF transistors include the BLF278 from NXP Semiconductors and the MRFE6VP61K25H from Freescale Semiconductor.
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