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MRF9060L
Product name: MRF9060L
MRF9060L
Product name: MRF9060L
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Shipping & Payment
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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MRF9060L DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The MRF9060L is a high-performance RF power transistor designed for use in high-power linear and non-linear applications in the 2.0 to 30 MHz frequency range. This transistor is specifically designed to provide efficient Class AB operation with high gain and excellent linearity.The MRF9060L features a rugged design with a hermetically sealed ceramic package that provides high reliability and thermal performance. It delivers a peak output power of 150 watts with a gain of 16 dB and a collector efficiency of up to 55%.This transistor is well-suited for a wide range of RF power amplifier applications, including amateur radio, two-way radio, broadcast, and industrial applications. It offers excellent stability over temperature and load variations, making it a versatile choice for high-power RF amplifiers.The MRF9060L is designed for easy integration into RF amplifier systems, with a simple 50-ohm input and output impedance matching. Its compact size and high power density make it ideal for applications where space is limited or where high power output is required in a small form factor.
Key Features
- Frequency range from 860 to 960 MHz
- Typical output power of 60W
- Typical gain of 19 dB
- Efficiency of 60%
- Excellent linearity
- Integrated ESD protection
- Low thermal resistance
Application
- RF amplifiers in wireless communication systems
- Radar systems
- Satellite communication systems
- Broadcast transmitters
- Microwave ovens
- Industrial heating systems
- Medical equipments
- Amateur radio systems
- Automotive radar systems
- Electronic warfare systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Manufacturer | Freescale / NXP | Product Category ! | RF FETs |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is MRF9060L?
The MRF9060L is a high-power N-channel RF metal-oxide-semiconductor field-effect transistor (MOSFET) designed for use in high-frequency and high-power amplifier applications. It is commonly used in radio frequency (RF) power amplifiers for wireless communication systems, including mobile radio and base station equipment.
How Does MRF9060L Work?
The MRF9060L works by amplifying radio frequency signals with high power and efficiency. It utilizes the principles of MOSFET operation to provide high gain and output power in RF amplifier circuits. The transistor's design enables it to handle high-frequency signals with minimal distortion, making it suitable for RF power amplifier applications.
How Many Pins does MRF9060L have and What are the Functions of the Pinout Configuration?
The MRF9060L is housed in a 3-lead NI-1230 package. The pinout configuration includes:
- Source (S): The lead that provides the connection to the source terminal of the MOSFET.
- Drain (D): The lead that provides the connection to the drain terminal of the MOSFET.
- Gate (G): The lead that provides the connection to the gate terminal of the MOSFET.
What are the Pros and Cons of MRF9060L?
Pros:
- High Power Handling: Designed for high-power RF amplifier applications.
- High Gain: Provides high gain for amplifying weak RF signals to high power levels.
- Efficiency: Offers high efficiency in converting DC power to RF power, reducing power consumption.
- Wide Frequency Range: Suitable for a wide range of radio frequencies, enabling versatile application.
Cons:
- Complex Biasing: May require careful biasing for optimal performance in specific applications.
- Heat Dissipation: High-power operation may require consideration for thermal management and heat dissipation.
- Bias Instability: Susceptible to bias instability if not properly designed into the circuit.
Are There Any Equivalents/Alternatives to MRF9060L for Recommendation?
- The MRF9045L from NXP Semiconductors is a similar high-power RF MOSFET suitable for RF amplifier applications.
- Alternatives to the MRF9060L include the BLF278 from Ampleon and the MGFC47H3552 from MACOM.
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