MTP3055VL

Logic Level Power MOSFET 60V, 12 A, 800-TUBE
6,364 Effective Inventory

MTP3055VL

Effective Inventory6,364

Logic Level Power MOSFET 60V, 12 A, 800-TUBE

  • Manufacturer Part # : MTP3055VL

  • Package/Case: TO-220-3

  • Brand: Onsemi

  • Product Categories : Single FETs, MOSFETs

Quality Assurance

Quality Assurance

All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.

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About Payment

We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.

If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

Confirm the return or exchange with our staff.

Maintain the goods in their original condition as received.

Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]

About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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MTP3055VL DataSheet
no-price

Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!

Rapid Quote

Please submit RFQ for MTP3055VL or email to us: Email: [email protected], we will contact you in 12 hours.

Details

TMOS V™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHMTMOSV is a new technologydesigned to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density ofour 50 and 60 volt TMOS devices. Just as with our TMOSE–FET designs, TMOSV is designed to with stand high energy in the avalanche and commutation modes.New Features of TMOS V • On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on)Technology • Faster Switching than E–FET PredecessorsFeatures Common to TMOS V and TMOS E–FETS • Avalanche Energy Specified • IDSSand VDS(on)Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E–FET

Key Features

  • On–resistance Area Product about One–half that of Standard
  • MOSFETs with New Low Voltage, Low RDS(on)Technology
  • Faster Switching than E–FET Predecessors
  • Features Common to TMOS V and TMOS E–FETS
  • Avalanche Energy Specified
  • IDSSand VDS(on)Specified at Elevated Temperature
  • Static Parameters are the Same for both TMOS V and TMOS E–FET

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Part Life Cycle Code Active
Part Package Code TO-220AB Pin Count ! 3
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 69 Weeks, 5 Days Additional Feature ! AVALANCHE RATED
Avalanche Energy Rating (Eas) 72 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 12 A Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.18 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ! ENHANCEMENT MODE
Operating Temperature-Max 175 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 48 W
Pulsed Drain Current-Max (IDM) 42 A Qualification Status ! Not Qualified
Surface Mount ! NO Terminal Finish MATTE TIN
Terminal Form ! THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification MTP3055VL PDF Download

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