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NDD02N60Z-1G
MOSFET N-CH 600V 2.2A IPAK
NDD02N60Z-1G
MOSFET N-CH 600V 2.2A IPAK
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Service & Packaging
Service & Packaging
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Initiate the application within 90 days from the shipment date.
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NDD02N60Z-1G DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The NDD02N60Z-1G power MOSFET from ON Semiconductor is a top-of-the-line N-channel enhancement mode MOSFET designed for high voltage applications. With a maximum drain-source voltage of 600 volts, this MOSFET is perfect for use in power supplies, motor control systems, and lighting applications. Its low on-state resistance of 1.25 ohms reduces conduction losses and improves the efficiency of power switching circuits. The TO-252 (DPAK) package ensures efficient thermal dissipation and easy mounting on circuit boards. The optimized gate charge enables fast switching, reducing switching losses and allowing for high-frequency operation. Additionally, the advanced technology used in the NDD02N60Z-1G MOSFET ensures ruggedness, reliability, and performance in even the most demanding applications. It boasts excellent avalanche energy and di/dt capability, providing robustness against transient overloads and spikes
Key Features
- This MOSFET is designed for high-frequency switching with low on-resistance
- It has a drain-source voltage rating of 600V and fast switching speed
- The NDD02N60Z-1G offers a continuous drain current of 2A making it suitable for power supplies and motor control
Application
- Ignition Coil
- Frequency Converter
- Power Factor Correction
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Mfr | onsemi |
| Series | - | Package | Tube |
| Product Status | Obsolete | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.8Ohm @ 1A, 10V | Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.1 nC @ 10 V | Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 274 pF @ 25 V | FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) | Operating Temperature ! | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Supplier Device Package | I-PAK |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | Base Product Number | NDD02 |
| Manufacturer | onsemi | Product Category ! | MOSFET |
| RoHS | Details | Mounting Style | Through Hole |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 1.4 A |
| Rds On - Drain-Source Resistance | 4 Ohms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage | 4.5 V | Qg - Gate Charge | 10.1 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature ! | + 125 C |
| Pd - Power Dissipation | 57 W | Channel Mode | Enhancement |
| Brand | onsemi | Configuration | Single |
| Forward Transconductance - Min | 1.7 S | Product Type ! | MOSFET |
| Factory Pack Quantity | 75 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Unit Weight | 0.139332 oz |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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