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NE4210S01
Noise-Optimized Gallium Arsenide FET
NE4210S01
Noise-Optimized Gallium Arsenide FET
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Manufacturer Part # : NE4210S01
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Package/Case: S0-1
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Part Status : Obsolete
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Brand: Renesas
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Product Categories : RF FETs, MOSFETs
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RoHS:
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
About Payment
We accept various payment methods, including VISA, MasterCard, UnionPay, Western Union, PayPal, and other channels.
If you have a specific payment method in mind or would like to inquire about rates and other details, please feel free to contact us.
WireTransfer
Paypal
CreditCard
WesternUnion
MoneyGram
Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
Example
Tape and Reel
Cut Tape
Tube or Tray
NE4210S01 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The NE4210S01 is a cutting-edge System-on-Chip that boasts high performance, low power consumption, and affordability, making it an ideal choice for a variety of embedded applications. With its four ARM Cortex-A53 64-bit cores clocking in at speeds up to 1.3GHz, this SoC is well-equipped to handle industrial automation, automotive infotainment, and smart home devices with ease
Key Features
- A high-frequency transistor design
- Epi-planar construction for improved thermal performance
- Low noise figure and high transition frequency
- Suitable for amplification and oscillation circuits
Application
- Perfect choice for radar systems
- Reliable performance in satellite communications
- Versatile GaN transistor for industrial use
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Manufacturer | CEL | Product Category ! | RF JFET Transistors |
| RoHS | Details | Transistor Type | HFET |
| Technology | GaAs | Operating Frequency ! | 12 GHz |
| Gain | 13 dB | Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 4 V | Vgs - Gate-Source Breakdown Voltage | - 3 V |
| Id - Continuous Drain Current | 70 mA | Maximum Operating Temperature ! | + 125 C |
| Pd - Power Dissipation | 165 mW | Mounting Style | SMD/SMT |
| Package / Case | S0-1 | Brand | CEL |
| Forward Transconductance - Min | 55 mS | NF - Noise Figure | 0.5 dB |
| Product | RF JFET | Product Type ! | RF JFET Transistors |
| Factory Pack Quantity | 1 | Subcategory | Transistors |
| Type | GaAs HFET |
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