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NJVMJD50T4G
Bipolar Transistors - BJT BIP NPN 1A 400V TR
NJVMJD50T4G
Bipolar Transistors - BJT BIP NPN 1A 400V TR
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Service & Packaging
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NJVMJD50T4G DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The NJVMJD50T4G is a versatile NPN Bipolar Power Transistor that is specifically engineered for a wide range of applications. Its design makes it ideal for use in line operated audio output amplifier circuits, as well as SWITCHMODE power supply drivers and other switching applications. With its high performance capabilities, this transistor is sure to deliver reliable and efficient operation in any circuit where it is utilized
Key Features
- Automotive Grade: AEC-Q101 Qualified
- Rohs Compliant and Pb-Free for Environmentally Friendly Design
- Compliant with Automotive Industry Standard AS9120
- Pb-Free and RoHS Compliant, Environmentally Responsible
- AEC-Q101 Qualified for High Reliability in Automotive Applications
- Pb-Free and RoHS Compliant, Suitable for Environmental Friendly Products
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Status | Active | CAD Models | |
| Compliance | PbAHP | Package Type | DPAK-3 |
| Case Outline | 369C | MSL Type | 1 |
| MSL Temp (°C) | 260 | Container Type | REEL |
| Container Qty. | 2500 | ON Target | N |
| Polarity | NPN | Type | General Purpose |
| VCE(sat) Max (V) | 1 | IC Cont. (A) | 1 |
| VCEO Min (V) | 400 | VCBO (V) | 500 |
| VEBO (V) | 5 | VBE(on) (V) | 1.5 |
| hFE Min | 30 | hFE Max | 150 |
| fT Min (MHz) | 10 | PTM Max (W) | 15 |
| Pricing ($/Unit) | $0.2295Sample |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
FAQs
What is NJVMJD50T4G?
The NJVMJD50T4G is an N-channel Power MOSFET designed by ON Semiconductor. It is suitable for use in high-current, high-speed switching applications such as power supplies, motor control, and load switching.
How Does NJVMJD50T4G Work?
The NJVMJD50T4G works by acting as a switch to control the flow of current in a circuit. When a suitable voltage is applied to the gate terminal, the MOSFET allows current to flow between the source and drain terminals, effectively turning the MOSFET on. This enables the NJVMJD50T4G to control power flow and manage high-current loads efficiently.
How Many Pins does NJVMJD50T4G have and What are the Functions of the Pinout Configuration?
The NJVMJD50T4G is housed in a TO-252-3 (DPAK) package. The pinout configuration includes:
- GATE: The gate terminal used to control the switching operation of the MOSFET.
- DRAIN: The terminal through which the controlled current flows in and out of the MOSFET.
- SOURCE: The terminal that serves as the source of the current flowing through the MOSFET.
What are the Pros and Cons of NJVMJD50T4G?
Pros:
- High Current Capability: Suitable for high-power applications requiring high current handling.
- Fast Switching Speed: Enables efficient control of high-speed switching circuits.
- Low On-Resistance: Minimizes power dissipation and improves efficiency.
- Compact Package: The TO-252-3 package offers a good balance of power handling capability and size.
Cons:
- Voltage Limitations: The maximum voltage rating may not be suitable for certain high-voltage applications.
- Heat Dissipation: The MOSFET may require careful thermal management in high-power applications.
Are There Any Equivalents/Alternatives to NJVMJD50T4G for Recommendation?
- The FDPF18N50T from Fairchild Semiconductor is an equivalent N-channel Power MOSFET.
- Alternatives to the NJVMJD50T4G include the IRFZ44N from Infineon Technologies and the STP80NF55-06 from STMicroelectronics.
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