NTD20N06T4G
0A N-Channel MOSFET with 60V voltage ratingNTD20N06T4G
0A N-Channel MOSFET with 60V voltage rating
Quality Assurance
Quality Assurance
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Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
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Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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NTD20N06T4G DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
Power MOSFET 20 Amps, 60 Volts, N−Channel DPAKDesigned for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.Features• Lower RDS(on)• Lower VDS(on)• Lower Capacitances• Lower Total Gate Charge• Lower and Tighter VSD• Lower Diode Reverse Recovery Time• Lower Reverse Recovery Stored Charge• AEC Q101 Qualified − NTDV20N06• These Devices are Pb−Free and are RoHS CompliantTypical Applications• Power Supplies• Converters• Power Motor Controls• Bridge Circuits
Key Features
- High Reliability Rating
- Limited EMI Radiation
- Low Power Consumption
- Faster Startup Times
- Tighter Voltage Regulation
- Smoother Motor Control
Application
- High Voltage Power System
- Motor Speed Controller
- Rectifier Bridge Module
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Pbfree Code | Yes | Part Life Cycle Code | Active |
Part Package Code | DPAK (SINGLE GAUGE) TO-252 | Pin Count ! | 3 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
HTS Code ! | 8541.29.00.95 | Factory Lead Time | 52 Weeks, 1 Day |
Avalanche Energy Rating (Eas) | 170 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (Abs) (ID) | 20 A | Drain Current-Max (ID) | 20 A |
Drain-source On Resistance-Max | 0.046 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 120 pF | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode ! | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation Ambient-Max | 60 W | Power Dissipation-Max (Abs) | 60 W |
Pulsed Drain Current-Max (IDM) | 60 A | Qualification Status ! | Not Qualified |
Surface Mount ! | YES | Terminal Finish | MATTE TIN |
Terminal Form ! | GULL WING | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Turn-off Time-Max (toff) | 140 ns |
Turn-on Time-Max (ton) | 140 ns |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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