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NTE2383
This product, labeled NTE2383, is a Power Field-Effect Transistor in a P-Channel configuration
NTE2383
This product, labeled NTE2383, is a Power Field-Effect Transistor in a P-Channel configuration
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Manufacturer Part # : NTE2383
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Package/Case: TO220-3
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Part Status : ACTIVE
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Brand: Nte Electronics
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Product Categories : Single FETs, MOSFETs
Quality Assurance
Quality Assurance
All parts procured from our supply chain network undergo a rigorous incoming inspection process. This meticulous inspection ensures that the parts received by our customers are authentic and meet the required standards. Additionally, we maintain detailed records of these inspections to ensure transparency and traceability throughout the supply chain.
Certification
We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.
Shipping & Payment
Shipping & Payment
About Shipping
We generally ship orders within a few business days through reliable shipping carriers such as FedEx, SF, UPS, or DHL. We also have support for other shipping methods. If you would like to inquire about specific shipping details or costs, please don't hesitate to reach out to us.
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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NTE2383 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
NTE2383 is a P-Channel MOSFET transistor with a maximum voltage rating of 100V and a continuous drain current of 10.5A when operated at a case temperature of 25°C. It is designed to be mounted in a through-hole TO-220 package, which allows for easy installation on a printed circuit board or other electronic devices. The maximum power dissipation of NTE2383 is 75W when the case temperature is maintained at 25°C. This means that the transistor can handle a significant amount of power without overheating, making it suitable for high-power applications. The P-Channel design of NTE2383 allows for easy integration into circuits that require high-side switching, where the load is connected to the drain terminal. This makes it ideal for applications such as power management, motor control, and voltage regulation.
Key Features
- High current capability
- Low collector-emitter saturation voltage
- Fast switching speed
- Complementary NPN type available
- Designed for general-purpose switching and amplifier applications
- 5A continuous collector current
- 20A peak collector current
Application
- High Efficiency DC-DC Converters
- Switching Regulators
- Motor Control Circuits
- Power Management Systems
- Battery Charger Circuits
- Automotive Electronics
- Industrial Control Systems
- Telecommunication Equipment
- Audio Amplifiers
- Solar Power Systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Package | Bag | Product Status | Active |
| FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 300mOhm @ 5.3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 835 pF @ 25 V |
| Power Dissipation (Max) | 75W (Tc) | Operating Temperature ! | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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