NTE2633

frequency NPN transistor TO-126
3,807 Effective Inventory

NTE2633

Effective Inventory3,807

frequency NPN transistor TO-126

  • Manufacturer Part # : NTE2633

  • Package/Case: TSSOP

  • Part Status : ACTIVE

  • Brand: NTE

  • Product Categories : Bipolar RF Transistors

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Certification

We have successfully obtained various certification standards and have established our own professional testing laboratory. This ensures that every product we supply to our customers meets the highest quality standards. We adhere to strict testing protocols to maintain the consistency and accuracy of our products. To ensure that our products are original and genuine, we also collaborate with reputable third-party testing facilities to conduct rigorous quality testing. Our commitment to quality extends to meeting industry, legal, regulatory, and ISO 9001:2015 requirements.

Shipping & Payment

Shipping & Payment

About Shipping

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Service & Packaging

Service & Packaging

About After Sales Service

All Parts Extended Quality Guarantee

Initiate the application within 90 days from the shipment date.

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About packaging

Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.

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NTE2633 DataSheet

Pricing (USD)

Quantity Unit Price Ext. Price
1 $5.207 $5.21
200 $2.079 $415.80
500 $2.010 $1,005.00
1000 $1.974 $1,974.00

These prices are subject to market fluctuations, and a quote submission is required to obtain the latest prices.

Rapid Quote

Please submit RFQ for NTE2633 or email to us: Email: [email protected], we will contact you in 12 hours.

Details

NTE2633 is an RF transistor that falls under the NPN category, designed for use in high-frequency applications. It has a maximum voltage rating of 95V and a maximum current rating of 300mA, making it suitable for medium-power RF amplification needs. The transistor is capable of operating at frequencies up to 1.2GHz and can handle power levels up to 3W, making it ideal for a range of RF applications. The transistor comes in a Through Hole TO-126 package, which allows for easy installation on a printed circuit board or other electronic devices. The TO-126 package also provides good thermal conductivity, allowing for efficient heat dissipation during operation. NTE2633 is a reliable and durable component, designed to provide consistent performance across a range of operating conditions. Its NPN configuration allows for easy integration into existing circuit designs, while its high-frequency capabilities make it suitable for use in a variety of RF applications, such as amplifiers, oscillators, and transmitters.

Key Features

  • Designed for general purpose amplifier applications
  • Low collector-base voltage (VCBO = 30V)
  • High current (IC = 800mA)
  • Low saturation voltage (VCE(sat) = 0.5V)
  • Complementary NPN transistor to NTE2634
  • TO-92 package for easy mounting and soldering

Application

  • LED lighting systems
  • TV backlights
  • Automotive lighting
  • Signs and displays
  • Decorative lighting
  • Signage lighting
  • Architectural lighting
  • General lighting applications

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Part Life Cycle Code Active Reach Compliance Code
ECCN Code EAR99 Collector Current-Max (IC) 0.3 A
Collector-Base Capacitance-Max 2 pF Collector-Emitter Voltage-Max 95 V
Configuration SINGLE DC Current Gain-Min (hFE) 20
Highest Frequency Band HIGH FREQUENCY BAND JEDEC-95 Code TO-126
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 3 W Qualification Status ! Not Qualified
Surface Mount ! NO Terminal Form ! THROUGH-HOLE
Terminal Position SINGLE Transistor Application AMPLIFIER
Transistor Element Material SILICON Transition Frequency-Nom (fT) 1200 MHz
Package Bag Product Status Active
Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 95V
Frequency - Transition 1.2GHz Power - Max 3W
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA, 10V Current - Collector (Ic) (Max) 300mA
Operating Temperature ! 175°C (TJ) Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3 Supplier Device Package TO-126

Datasheet PDF

Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.

Preliminary Specification NTE2633 PDF Download

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