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PDTA113ZT
Small Signal Transistor PDTA113ZT: Featuring a PNP configuration with Silicon construction
PDTA113ZT
Small Signal Transistor PDTA113ZT: Featuring a PNP configuration with Silicon construction
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PDTA113ZT DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
The PDTA113ZT is a high-speed NPN bipolar transistor manufactured by NXP Semiconductors. It is housed in a SOT-416 package, which is a very small surface-mount device (SMD) package. This transistor is designed for general-purpose amplification and switching applications in electronic circuits.The PDTA113ZT has a maximum collector current (IC) rating of 100 mA and a DC current gain (hfe) of 100 to 600. It has a low collector-emitter saturation voltage of 0.3V at 10 mA and a high cutoff frequency of 1.5 GHz, making it suitable for use in high-frequency applications such as RF amplifiers.This transistor has a power dissipation (Ptot) rating of 200 mW and a maximum operating temperature of 150 degrees Celsius, ensuring reliable performance even in demanding operating conditions. The PDTA113ZT is also RoHS-compliant, meaning it meets the European Union's directive on the restriction of hazardous substances in electronic equipment.
Key Features
- PNP digital transistor
- High DC current gain
- Low collector-emitter saturation voltage
- Miniature package for easy mounting
- Low output capacitance for fast switching speeds
Application
- Automotive electronics
- Industrial control systems
- Consumer electronics
- Telecommunications equipment
- Medical devices
- Smart home devices
- Power management systems
- Sensor interfaces
- Appliance control systems
- Security systems
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Pbfree Code | Yes | Rohs Code | Yes |
| Part Life Cycle Code | Transferred | Part Package Code | SOT-23 |
| Pin Count ! | 3 | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Additional Feature ! | BUILT-IN BIAS RESISTOR RATIO IS 10 |
| Collector Current-Max (IC) | 0.1 A | Collector-Emitter Voltage-Max | 50 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | DC Current Gain-Min (hFE) | 35 |
| JEDEC-95 Code | TO-236AB | JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 3 |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | PNP |
| Power Dissipation-Max (Abs) | 0.25 W | Qualification Status ! | Not Qualified |
| Surface Mount ! | YES | Terminal Finish | Tin (Sn) |
| Terminal Form ! | GULL WING | Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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