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PMBFJ175
JFET transistor
PMBFJ175
JFET transistor
Quality Assurance
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Shipping & Payment
Shipping & Payment
About Shipping
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Service & Packaging
Service & Packaging
About After Sales Service
All Parts Extended Quality Guarantee
Initiate the application within 90 days from the shipment date.
Confirm the return or exchange with our staff.
Maintain the goods in their original condition as received.
Lastly, please note that the eligibility for return or exchange of goods is subject to an assessment of the actual condition of the returned items. We will evaluate the received goods before finalizing the return or exchange process. If you have any inquiries or require further assistance regarding returns or exchanges, please don't hesitate to contact us at [email protected]
About packaging
Regarding packaging, our products are carefully packed in anti-static bags to provide ESD anti-static protection. The outer packaging is durable with secure closure. We support various packaging methods such as Tape and Reel, Cut Tape, Tube, or Tray.
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PMBFJ175 DataSheet
Current price plan is under preparation. Please contact our customer service team for the latest pricing information. Thank you for your understanding and support!
Details
PMBFJ175 is a small signal field-effect transistor (FET) specifically designed for low-power applications in radio frequency (RF) circuits. It belongs to the PMBFJ series of transistors manufactured by NXP Semiconductors, a leading global supplier of electronic components. The PMBFJ175 is categorized as a junction FET (JFET), also known as a depletion mode FET, which means that its conducting channel is formed when no voltage is applied to its gate terminal. The PMBFJ175 is housed in a SOT23 package, making it a compact and versatile component suitable for use in a wide range of RF applications including amplifiers, oscillators, mixers, and frequency multipliers. With a maximum operating frequency of several gigahertz, the PMBFJ175 offers high performance capabilities in terms of gain, noise figure, and efficiency. Key specifications of the PMBFJ175 include a low drain-source on-state resistance (RDS(on)), high transconductance (gm), and low input capacitance (Ciss), making it ideal for low-power RF circuits where efficient signal amplification and processing are essential.
Key Features
- Supply Voltage: 450V
- Drain Current: 2A
- Power Dissipation: 40W
- Low on-resistance
- Fast switching speed
- Enhanced thermal performance
- High input impedance
- Available in TO-220 package
- Low gate charge
Application
- Gas discharge lamps
- High-intensity discharge lamps
- Medical and surgical lasers
- Industrial welding and cutting systems
- Laser engraving machines
- Laser hair removal devices
- Laser therapy devices for medical treatments
- Laser show systems
- Optical communication systems
- Scientific research and development applications
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category ! | JFET | Technology | Si |
| Transistor Polarity | P-Channel | Series | PMBFJ175 |
| Brand | NXP Semiconductors | Product Type ! | JFETs |
| Subcategory | Transistors | Type | JFET |
Datasheet PDF
Datasheets record the features, absolute maximum ratings, applications and more of the device, which benefit a lot as an overall guide to the specific application of the part.
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